Search results

1

Ohmic Contacts To GaN by Solid-Phase Regrowth

100%

Kamińska E., Piotrowska A., Barcz A., Ilka L., Guziewicz M., Kasjaniuk S., Dynowska E., Kwiatkowski S., Bremser M. D., Davis R. F.

Acta Physica Polonica A

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1997

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vol. 92

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issue 4

819-823

EN

Ni/Si-based contact schemes based on the solid-phase regrowth process have been developed to form low-resistance ohmic contacts to GaN with a minimum contact resistivity of 1×10^{-3} Ωcm^{2} and ≈1×10^{-2} Ωcm^{2} to GaN:Si (n ≈ 2×10^{17} cm^{-3}) and GaN:Mg (p ≈ 3×10^{17} cm^{-3}). The solid-phase regrowth process responsible for the ohmic contact formation was studied using X-ray diffraction, secondary ion mass spectrometry and Rutherford backscattering spectrometry.

2

Interfacial Microstructure of Ni/Si-Based Ohmic Contacts To GaN

100%

Kamińska E., Piotrowska A., Jasiński J., Kozubowski J., Barcz A., Gołaszewska K., Bremser M., Davis R.

Acta Physica Polonica A

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1998

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vol. 94

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issue 3

383-386

EN

The microstructure of Ni/Si-based contacts to GaN has been studied using transmission electron microscopy methods. The transition from non-ohmic to ohmic behavior appears to correlate with the initial limited reaction of GaN with Ni and further Si-Ni reaction-driven decomposition of the interfacial GaN-Ni phase.

3

Two-Probe Measurements of Electron Transport in GaN:Si/(Ga,Mn)N/GaN:Si Spin Filter Structures

80%

Kalbarczyk K., Foltyn M., Grzybowski M., Stefanowicz W., Adhikari R., Li T., Kruszka R., Kamińska E., Piotrowska A., Bonanni A., Dietl T., Sawicki M.

Acta Physica Polonica A

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2016

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vol. 130

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issue 5

1196-1198

EN

Results of two-probe magnetoresistance studies in GaN:Si/(Ga,Mn)N/GaN:Si prospective spin filter structures are reported. It is postulated that transport characteristics are strongly influenced by highly conductive threading dislocations and that shrinking of the device size partially mitigates the issue. Simultaneously, maxima at ≈1500 Oe on overall weak, up to 2%, negative magnetoresistance are seen at low temperature, whose origin has been tentatively assigned to effects taking place at the contacts areas.

4

Investigation of Heterostructure Formed from Hole- and Electron-Doped Lanthanum Manganites

80%

Vengalis B., Rosa A., Devenson J., Šliužienė K., Lisauskas V., Oginskis A., Anisimovas F., Pyragas V.

Acta Physica Polonica A

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2005

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vol. 107

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issue 2

290-293

EN

High crystalline quality films of n-La_{2/3}Ce_{1/3}MnO_3, p-La_{2/3}Ca_{1/3}MnO_3 and related p-n diode structures were grown heteroepitaxially on lattice-matched SrTiO_3(100) substrates by dc magnetron sputtering and pulsed laser deposition. The La_{2/3}Ce_{1/3}Mn O_3/La_{2/3}Ca_{1/3}MnO_3 bilayer was patterned into a strip-like geometry to investigate electrical properties of the interface. Significant magnetoresistance values and nonlinear current-voltage characteristics were indicated for the interface of the p-n diode heterostructure.

5

LSMO/YBCO Heterostructures and Investigation of "Negative" Resistance Effect in the Interface

70%

Sojková M., Nurgaliev T., Štrbík V., Chromik Š., Blagoev B., Španková M.

Acta Physica Polonica A

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2017

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vol. 131

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issue 4

842-844

EN

Samples containing the ferromagnetic manganite La_{0.67}Sr_{0.33}MnO₃ (LSMO) and high temperature superconducting YBa₂Cu₃O₇ (YBCO) single thin film areas and YBCO/LSMO bilayer area were prepared on LaAlO₃ (LAO) substrates and were used for investigation of the electrical properties of the interface. The measurements in the YBCO/LSMO interface demonstrated "negative" values of the resistance. A good interpretation of the obtained results was performed in the framework of a 1D model, which took into account the resistance of the interface R_{if} and the temperature dependence of the resistance of YBCO and LSMO films. It was shown that the effect of "negative" resistance arises because of the redistribution of the measuring electrical current in the interphase area if the resistance of the interface R_{if} is small in comparison with the resistances of the neighboring electrodes.

Refine search results

Ohmic Contacts To GaN by Solid-Phase Regrowth

Interfacial Microstructure of Ni/Si-Based Ohmic Contacts To GaN

Two-Probe Measurements of Electron Transport in GaN:Si/(Ga,Mn)N/GaN:Si Spin Filter Structures

Investigation of Heterostructure Formed from Hole- and Electron-Doped Lanthanum Manganites

LSMO/YBCO Heterostructures and Investigation of "Negative" Resistance Effect in the Interface