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Non-Ohmic Conductivity of High Resistivity CdTe

100%
Łusakowski J., Szczytkowski J., Szadkowski K., Kamińska E., Piotrowska A., Karczewski G., Wojtowicz T.
Acta Physica Polonica A
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1995
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vol. 88
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issue 4
803-806
EN
Conductivity measurements were carried out at room temperature on samples of nominally undoped Bridgman, bulk crystals and MBE-grown lay­ers of CdTe. The samples were equipped with indium contacts which made it possible to determine the voltage distribution along the path of the cur­rent flow. The results show that for both types of CdTe almost all of the applied voltage drops in the vicinity of the positively biased contact. The resistance of the samples was shown not to depend on the distance between the pads. The results agree with predictions of model of current injection into semiconductors with deep traps.
2
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AC Electrical Conductivity and Dielectric Properties of Perovskite (Pb,Ca)TiO_3 Ceramic

51%
El-Mallah H.
Acta Physica Polonica A
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2012
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vol. 122
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issue 1
174-179
EN
Pb_{1 - x }Ca_{x}TiO_3 perovskite crystalline structure with x = 0, 0.2, 0.6, 0.7, and 0.8 were prepared by mixture method. The ac conductivity and dielectric properties of the studied bulk compositions have been investigated in the frequency range 1 × 10^3 - 5 × 10^6 Hz and temperature range 303-473 K. The experimental results indicate that the ac conductivity σ_{ac}(ω), dielectric constant ε' and dielectric loss ε" depend on the temperature and frequency. The ac conductivity was found to obey the power law ω^{S} with the frequency exponent S > 1 decreasing with increasing temperature. The present results are compared to the principal theories that describe the universal dielectric response behavior. Values of dielectric constant ε' and dielectric loss ε" were found to be temperature and frequency dependent and the maximum barrier height W_{m} is calculated.
3
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Electrical Charge Transfer in Complex Oxides

51%
Shevchuk V., Kayun I.
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issue 1
150-154
EN
The electrophysical properties (temperature-frequency dependence of conductivity and dielectric constant, current of depolarization) of complex oxide single crystals (Ca-Ga-Ge-garnet, Ca-Ga-germanate, Pb-, Ca-, Cd-tungstates) are analyzed. The experimental results for different crystallographic axes were obtained in the frequency range 10-10^{5} Hz and temperature range 290-650 K. The main parameters of conductivity and depolarization currents are determined. The nature of polarization charge induced by applied external field is discussed using the model of polarization at hopping exchange of charge between complex dipolar defects and space-inhomogeneous distribution of charge in the sample. Existence of small polarons in the crystals is considered.
4
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Microstructural Analysis and Transport Properties of RuO_2-Based Thick Film Resistors

51%
Gabáni S., Flachbart K., Pavlík V., Pietriková A., Gabániová M.
Acta Physica Polonica A
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2008
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vol. 113
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issue 1
625-628
EN
RuO_2-based low temperature sensors appear as very good secondary thermometers, mainly in the temperature range below 4.2 K. This is due to their high temperature sensitivity and small magnetoresistance. Both properties are strongly influenced by the manufacturing process (mainly by firing temperature and firing time). In our contribution we show that the microstructure of sensors and the temperature dependence of their resistance R(T) down to 50 mK, in case when all sensors are prepared from the same paste, can be strongly influenced by change of the firing temperature from 800°C to 900°C. The paper also presents results on the X-ray microanalysis and the analysis of electrical conductivity of these sensors.
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