In this work we employ technique of optically detected cyclotron resonance for evaluation of the role of localization processes in CdTe/CdMnTe and CdMnTe/CdMgTe quantum well structures. From microwave-induced changes of excitonic emissions we evaluate magnitude of potential fluctuations (Stokes shift), correlate optically detected cyclotron resonance results with the results of time-resolved experiments and discuss nature of recombination processes in the limit of a strong localization.
Magnetoresistance measurements were performed on an n-type PbTe/PbEuTe quantum well and weak antilocalization effects were observed. This indicates the presence of spin-orbit coupling phenomena and we showed that the Rashba effect is the main mechanism responsible for this spin-orbit coupling. Using the model developed by Iordanskii et al., we fitted the experimental curves and obtained the inelastic and spin-orbit scattering times. Thus we could compare the zero field energy spin-splitting predicted by the Rashba theory with the energy spin-splitting obtained from the analysis of the experimental curves. The final result confirms the theoretical prediction of strong Rashba effect on IV-VI based quantum wells.
Fast spin relaxation of Mn^{2+} ions in a magnetic quantum well of CdMnTe with 1% Mn fraction is related to a very efficient spin-flip interaction between Mn ions and free carriers. This mechanism of spin relaxation becomes dominant at increased excitation densities. The observed response of the photoluminescence bands to the Mn^{2+} magnetic resonance indicates that free carriers are heated at the magnetic resonance conditions. A decrease in formation/recombination rates of free and trion excitons is observed. Donor bound exciton photoluminescence is enhanced, which we relate to delocalization of free excitons, caused by interaction with microwave heated free carriers.
Inverse spin Hall effect consists in conversion of spin currents into electric currents and has recently been observed using spin-pumping operated by ferromagnetic resonance in permalloy/Pt(Cr) thin film structures. We prepared several Co_2Cr_{0.4}Fe_{0.6}Al/Pt thin film structures to observe for the first time inverse spin Hall effect in bilayer structures comprising ferromagnetic half-metallic Heusler alloy. In but a few Co_2Cr_{0.4}Fe_{0.6}Al/Pt samples we succeeded in observing inverse spin Hall effect voltage of few microvolts by spin pumping resulting from ferromagnetic resonance. This confirms that spin polarized current can be transferred into Pt layer. Inverse spin Hall effect was 2-3 times larger than that detected in permalloy/Pt bilayer under the same conditions.
We compare the results of electrically detected magnetic resonance in a 2D electron gas in Si/SiGe quantum wells with transport and magnetic resonance measurements on ferromagnetic Ga_{1-x}Mn_xAs. The results lead us to the conclusion that observation of electrically detected magnetic resonance is possible only in the case of a slow spin relaxation, where the microwave resonant absorption leads to a noticeable change of spin magnetization.
We present first-principles studies of the zero field spin splitting of conduction band in [110] strained GaAs that determine spin lifetimes in semiconductors. Our calculations reveal strong anisotropy of the linear-k spin splitting in the (110) plane of the Brillouin zone and very minor in the (001) plane. This provides a qualitative understanding of the difference in the spin lifetimes in the GaAs/AlAs heterostructures grown along [100] and [110] crystallographic directions.
We report on all optical spatially resolved spin diffusion experiments in an unstrained, unbiased n-GaAs layer. Optical pump and probe intensities are varied over a wide range to study the impact of optical disturbance on spin transport. Both quantities have a considerable influence on the measured spin diffusion length and spin lifetime. Furthermore, an effective spin diffusion coefficient was obtained as a function of temperature.
Exciton spin decay is studied in a self-assembled InAs/GaAs quantum dot. The spin relaxation results from an interplay of two factors: the Bir-Pikus Hamiltonian and the short-range exchange interaction, leading to one and two phonon assisted transitions. We establish a hierarchy between the resulting transition rates and show the dominating role of transverse phonons for all the transitions.
In this paper we present the results of theoretical calculations for spin polarization η of band electrons in diluted magnetic semiconductor subjected to a polarized light wave and a carrier-warming electric field E. It was shown that the maximum value of η_{max} can be reached at a certain E_{max} corresponding to the peak of the carrier drift velocity v(E). For the higher doping impurity concentration, the values of η_{max} become lower due to the equivalent decrease of electron temperature.
We review the theoretical proposal for quantum computing with electron spins in quantum confined structures and discuss the essential requirements for its implementation. The quantum bit is represented by the spin of the electron, as opposed to the charge (orbital) degrees of freedom. In this context, we analyze a number of physical realizations of the elementary building blocks for quantum computation: a universal set of quantum gates, state preparation and measurement. Finally, we discuss the production, transport, and detection of electronic Einstein-Podolski-Rosen pairs, which are an important resource for quantum communication.
Spin related phenomena in quantum nanostructures have attracted recently much interest due to fast growing field of spintronics. In particular complex nanostructures are important as they provide a versatile system to manipulate spin and the electronic states. Such systems can be used as spin memory devices or scalable quantum bits. We investigate the spin relaxation for an electron in a complex structure composed of a quantum dot surrounded by a quantum ring. We shown that modifications of the confinement potential result in the substantial increase of the spin relaxation time.
We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in an n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a semiclassical Monte Carlo approach, which takes into account the intravalley scattering mechanisms of warm electrons in the semiconductor material. Spin relaxation is considered through the D'yakonov-Perel mechanism, which is the dominant mechanism in III-V semiconductors. The evolution of spin polarization is analyzed by computing lifetimes and depolarization lengths as a function of the doping density in the range 10^{13} ÷ 5 × 10^{16} cm^{-3}, for different values of the amplitude of the static electric field (0.1 ÷ 1.0 kV/cm). We find an increase of the electron spin lifetime as a function of the doping density, more evident for lattice temperatures lower than 150 K. Moreover, at very low intensities of the driving field, the spin depolarization length shows a nonmonotonic behaviour with the density. At the room temperature, spin lifetimes and depolarization lengths are nearly independent on the doping density. The underlying physics is analyzed.
We observe a strong anisotropy of spin relaxation and a decrease in the spin relaxation rate with increasing electron mobility in contrast to predictions of the classical D'yakonov-Perel spin relaxation model. We show that for high electron mobility the cyclotron motion causes an additional modulation of spin-orbit coupling, leading to an effective suppression of the spin relaxation rate.
We study the mechanism of spin relaxation in 3D disordered metallic systems due to the spin-orbit scattering on charged impurities. The transport relaxation time for spin-polarized conduction electrons is calculated analytically in the presented model, where the screened Coulomb potential is used for the description of impurities.
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