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Conductivity of Optically Excited Electrons in GaAs in Quantizing Magnetic Fields

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Łusakowski J., Grynberg M., Huant S.
Acta Physica Polonica A
|
1995
|
vol. 87
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issue 2
482-486
EN
Magnetoconductivity (σ) measurements on an n-type molecular beam epitaxy grown epitaxial layer and on a bulk liquid encapsulated Czochralski grown undoped semi-insulating GaAs samples were performed for magnetic fields (B) up to 21 T at 4.2 K. To enable current measurements in a wide range of B both samples were permanently illuminated with a band-to-band light. It is shown that for sufficiently high magnetic fields σ(B) dependence is the same for both materials. This result underlines a role of scattering by long-range fluctuations of the electrostatic potential in high-quality n-GaAs in quantizing magnetic fields.
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