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Temperature Dependent Electron Beam Induced Current Study of Defects in Silicon

100%

Sekiguchi T., Kusanagi S., Miyamura Y., Sumino K.

Acta Physica Polonica A

1993

vol. 83

issue 1

71-79

A new computer-aided electron beam induced current system was developed which makes it possible to obtain two-dimensional mapping of the absolute magnitudes of electron beam induced current signals over the temperature range 15 K-400 K. Electronic states of defects in cast silicon and deformation-induced dislocations in float-zone silicon were investigated from the analyses of temperature dependencies of electron beam induced current contrasts of the defects measured with the system. Electron beam induced current active defects in cast Si were identified to be Fe impurity atoms or Fe-B pairs incorporated at the dislocation core depending on the cooling rate of a crystal. Dislocations in float-zone silicon were shown to have an energy level for carrier recombination in the lower half of the band gap.

Iron Impurity Related Optical Transitions in HgSe:Fe

80%

Szuszkiewicz W., Julien C., Balkanski M., Arciszewska M., Witkowska B., Mycielski A.

Acta Physica Polonica A

1991

vol. 80

issue 3

437-440

Fe^{2+} crystal field transitions and the heavy hole valence band to the Fe level transitions (e + Fe^{3+} → Fe^{2+}) have been observed and discussed for HgSe doped with iron.

Improvement of Electrical Properties of Hg_{1-x}Zn_{x}Se upon Doping with Fe

80%

Dobrowolski W., Grodzicka E., Kossut J., Witkowska B.

Results of measurements of electron concentration and mobility in mixed crystals of Hg_{1-x}Zn_{x}Se (0 ≤ x ≤ 0.07) doped with resonant Fe donors (0 ≤ n_{Fe} ≤ 5 × 10^{19} cm^{-3}) at liquid helium temperatures are presented. The data show that there is a considerable improvement of the electrical properties of the material when Fe impurities are present. The analysis of the mobility in terms of the scattering from ionized centers (accounting for possible spatial correlation of impurity charges) and the alloy scattering is in agreement with the measured data.

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3 Acta Physica Polonica A

1 1993

1 1992

1 1991

2 Witkowska B.

1 Arciszewska M.

1 Balkanski M.

1 Dobrowolski W.

1 Grodzicka E.

1 Julien C.

1 Kossut J.

1 Kusanagi S.

1 Miyamura Y.

1 Mycielski A.

1 Sekiguchi T.

1 Sumino K.

1 Szuszkiewicz W.

Search results

Temperature Dependent Electron Beam Induced Current Study of Defects in Silicon

Iron Impurity Related Optical Transitions in HgSe:Fe

Improvement of Electrical Properties of Hg_{1-x}Zn_{x}Se upon Doping with Fe