In situ growth monitoring technique has been used to analyse growth disturbances during the liquid phase electroepitaxial growth of thick AlGaAs layers. It allowed us to explain the nature of growth instability occurring at the end of the growth and affecting the maximum thickness of AlGaAs layers obtainable by liquid phase electroepitaxy.
Semi-bulk epitaxial layers of GaSb and AlGaSb up to 3 and 1 mm thick, respectively, were successfully grown by the liquid phase electroepitaxy on GaSb substrates. The growth procedure allowed us to achieve high crystallographic perfection as well as compositional uniformity of ternary layers.
The results of electroepitaxial growth of thick GaAlAs layers on GaAs substrates are presented. It is experimentally proven that effective convective mixing of the solution volume results in the compositional uniformity of GaAlAs layers, even in spite of the high compositional non-uniformity of the material supplying the solutes (Al, As) to the solution during the growth of the layers. For the first time this allowed us to grow uniform GaAlAs layers with thicknesses up to 200-300 μm in a wide composition range from a small (5 g) amount of solution.
A series of GaInAs/InP heterostructures was grown by liquid phase epitaxy. The heterostructures were characterized by magnetotransport measurements carried out down to 1.8 K and up 10 T. The results demonstrate the existence of the high-mobility two-dimensional electron gas in the narrow-gap GaInAs as well as the presence of residual conductance through the InP buffer layer.
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