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Structural Evolution of Near-Surface Layers in NiTi Alloy Caused by an Ion Implantation

100%
Swiatek Z., Michalec M., Levintant-Zayonts N., Bonarski J., Budziak A., Bonchyk O., Savitskij G.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
75-78
EN
The results of X-ray diffraction studies on structural changes in the near-surface layers in the NiTi alloy caused by nitrogen-ion implantation with the energy E = 50 keV and the fluence D = 10^{18} cm^{-2} are presented. X-ray diffractometry, using the Philips diffractometer type X'Pert in the Bragg-Brentano geometry, was used to identify the phase composition of NiTi alloy. For layer by layer analysis of structural changes in the near-surface layers, the D8 Discover Bruker diffractometer with polycapilar beam optics was used. The ion-implanted NiTi alloy in the near-surface layer exhibits five phases: the dominating austenite phase, two martensitic phases and a small amount of the Ni_4Ti_3 and NTi phases. Along with the decreasing thickness of the near-surface layer investigated in material an increasing fraction of the Ni_4Ti_3 and NTi phases was observed. With the thickness of this layer about 340 nm, besides still existing the austenite, Ni_4Ti_3 and NTi phases, only one martensitic phase is present in the alloy. Further decrease of the thickness of the near-surface layer to about 170 nm leads to the increasing fraction of the Ni_4Ti_3 and NTi phases.
2
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Influence of the Interface Quality on Magnetic Properties of Fe₂₀Ni₈₀/Tb-Co Films with Unidirectional Anisotropy

80%
Kulesh N., Balymov K., Vas'kovskiy V.
Acta Physica Polonica A
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2015
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vol. 127
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issue 2
525-527
EN
Influence of annealing on hysteresis properties of the soft magnetic layer in Fe₂₀Ni₈₀/Tb₂₆Co₇₄ and Fe₂₀Ni₈₀/Ti/Tb₂₆Co₇₄ films with unidirectional anisotropy was investigated. Modification of the interface by introduction of the ultrathin Ti spacer was demonstrated to improve stability of coercivity and exchange bias field. According to our assumption, the Ti spacer can act as a barrier preventing a thermally-induced diffusion between the magnetic layers. In order to verify this point grazing incidence X-ray fluorescent analysis was used. Comparison of two sets of data attributed to the samples with and without Ti spacer at different stages of annealing revealed decrease of the angular shift between Co and Ni dependences even after annealing at 70°C for Fe₂₀Ni₈₀/Tb₂₆Co₇₄ and absent of any changes up to 300°C for the Fe₂₀Ni₈₀/Ti/Tb₂₆Co₇₄ film. These results can be interpreted as an evidence of the low-temperature interface modification in form of diffusion-like process in the samples without Ti spacer.
3
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Effect of Nitrogen Plasma Afterglow on Amorphous Carbon Nitride Thin Films Deposited by Laser Ablation

61%
Alkhawwam A., Abdallah B., Kayed K., Alshoufi K.
Acta Physica Polonica A
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2011
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vol. 120
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issue 3
545-551
EN
By employing pulsed laser deposition, amorphous carbon nitride (a-CN_{x}) thin films, were prepared on unheated Si (100). Investigation of compositional and structural modifications induced by microwave nitrogen plasma afterglow on amorphous carbon nitride thin films, has been carried out in the range of nitrogen pressure 10-1000 Pa. The role of nitrogen plasma afterglow on the physicochemical and structural characteristics of a-CN_{x} was explored using the diagnostic techniques: Raman spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy. Upon analyzing the Raman and X-ray photoelectron spectra, it is concluded that employing nitrogen plasma afterglow during the films deposition favors, in general, the increase in nitrogen content and the formation of sp^2 bonding in the a-CN_{x} films. The analysis of scanning electron and atomic force microscopy images demonstrated that the films had a granular structure formed from particles coalesced together into cauliflower-like clusters and the particles size increased by increasing nitrogen pressure. A 2D atomic force microscopy line profile measurements provide evidence to a decrease in size of clusters using nitrogen plasma afterglow which could be due to the annihilation of excess vacancies and/or the elimination of grain boundaries. These analyses were found to be quite reliable to help understand the effects of microwave nitrogen plasma afterglow on amorphous carbon nitride thin films.
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