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Photoinduced Defects Creation on Sulfur Passivated Surface of GaAs

100%

Żytkiewicz Z., Dobaczewski L., Gomez D., Briones F.

Acta Physica Polonica A

1997

vol. 92

issue 5

1083-1086

We report on photoinduced defect creation on the sulfurized (100) GaAs surface. The process manifests itself by unrecoverable temporal decrease in the photoluminescence intensity of the GaAs surface treated by (NH_{4})_{2}S_{x} solution. The results are discussed in terms of a photoinduced process of the As_{Ga} antisite generation on the sulfurized surface of GaAs.

Adsorbate-Induced Restructuring of the Fe(100) Surface: Model Cluster Studies

80%

Arabczyk W., Rausche E., Storbeck F.

Acta Physica Polonica A

1992

vol. 81

issue 1

109-115

The Extended Hückel Theory (EHT) has been used to calculate the energy of iron clusters, Fe_{13}, modelling an Fe(100) surface, as well as the energy of iron clusters with oxygen, Fe_{13}-O, nitrogen, Fe_{13}-N, or carbon atom, Fe_{13}-C, adsorbed on a reconstructed/non-reconstructed surface. In order to determine the relative positions of iron atoms and of the adsorbed atom a sphere model was employed assuming displacement of only one iron atom.

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2 Acta Physica Polonica A

1 1997

1 1992

1 Arabczyk W.

1 Briones F.

1 Dobaczewski L.

1 Gomez D.

1 Rausche E.

1 Storbeck F.

1 Żytkiewicz Z.

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Photoinduced Defects Creation on Sulfur Passivated Surface of GaAs

Adsorbate-Induced Restructuring of the Fe(100) Surface: Model Cluster Studies