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Optical Pattern Fabrication in Amorphous Silicon Carbide with High-Energy Focused Ion Beams

100%

Tsvetkova T., Takahashi S., Sellin P., Gomez-Morilla I., Angelov O., Dimova-Malinovska D., Zuk J.

Acta Physica Polonica A

2011

vol. 120

issue 1

56-59

Topographic and optical patterns have been fabricated in a-SiC films with a focused high-energy (1 MeV) H^{+} and He^{+} ion beam and examined with near-field techniques. The patterns have been characterized with atomic force microscopy and scanning near-field optical microscopy to reveal local topography and optical absorption changes as a result of the focused high-energy ion beam induced modification. Apart of a considerable thickness change (thinning tendency), which has been observed in the ion-irradiated areas, the near-field measurements confirm increases of optical absorption in these areas. Although the size of the fabricated optical patterns is in the micron-scale, the present development of the technique allows in principle writing optical patterns up to the nanoscale (several tens of nanometers). The observed values of the optical contrast modulation are sufficient to justify the efficiency of the method for optical data recording using high-energy focused ion beams.

Advanced Characterization of Material Properties on the Nanometer Scale Using Atomic Force Microscopy

88%

Fenner M., Wu S., Yu J., Huber H., Kienberger F.

Acta Physica Polonica A

2012

vol. 121

issue 2

416-419

We report recent advances in material characterization on the nanometer scale using scanning microwave microscopy. This combines atomic force microscopy and a vector network analyzer using microwave tip sample interaction to characterize dielectric and electronic material properties on the nanometer scale. We present the methods for calibration as well as applications. Scanning microwave microscopy features calibrated measurements of: (1) capacitance with attofarad sensitivity. For calibration a well characterized array of capacitors (0.1 fF to 10 fF) is used. The method is applied to determine the dielectric properties of thin organic films, (2) Semiconductor dopant density. Calibration is performed by imaging the cross-section of a standard sample with differently doped layers (dopant stair case) from 10^{16} atoms/cm^3 to 10^{20} atoms/cm^3.

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2 Acta Physica Polonica A

1 2012

1 2011

1 Angelov O.

1 Dimova-Malinovska D.

1 Fenner M.

1 Gomez-Morilla I.

1 Huber H.

1 Kienberger F.

1 Sellin P.

1 Takahashi S.

1 Tsvetkova T.

1 Wu S.

1 Yu J.

1 Zuk J.

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Optical Pattern Fabrication in Amorphous Silicon Carbide with High-Energy Focused Ion Beams

Advanced Characterization of Material Properties on the Nanometer Scale Using Atomic Force Microscopy