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1
100%
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vol. 125
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issue 2
563-566
EN
The effects of alloying with 0.5, 1.0, and 2.0 at.% Nb on oxidation resistance of MoSi_2 are investigated at temperature range of 1400°C-1700°C. Rapid formation of a stable protective layer of silica resulted in a parabolic oxidation rate. The oxide layer thickness and the sample weight increased with increasing oxidation time. Impurities accelerated oxidation rate of MoSi_2 only slightly, however, did not affect the rate controlling mechanism for oxidation. There was no correlation between oxidation rate and the amount of impurity. The values of activation energies for oxidation of pure MoSi_2 and Nb-alloyed samples were similar to activation energy for diffusion of O_2 through silica. Diffusion of O_2 through the oxide scale remained the rate controlling mechanism with or without Nb impurity.
EN
For the first time, thin films of NdBaCo_{2}O_{5+x} were deposited by RF magnetron sputtering on different substrates. The films deposited on SrLaAlO_4(001) substrates exhibited highly textured structure with c-axis directed out-of-plane. Magnetic measurements M vs. T of three NdBaCo_{2}O_{5+x}/SrLaAlO_4(001) films revealed successively paramagnetic-ferromagnetic-antiferromagnetic transitions with decrease in temperature. Their paramagnetic Curie-Weiss temperatures were estimated to be in the range of T_{C}=100-116 K. Resistivity of the cobaltite thin film exhibited insulating behavior and the best fit was found for the variable range hopping mechanism.
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