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Dispersive Micro Raman Backscattering Spectroscopy Investigation of Arc Discharge Synthesized CNTs Doped by Boron and Nitrogen

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Babanejad S., Malekfar R., Seyyed Hosseini S.

Acta Physica Polonica A

2009

vol. 116

issue 2

217-220

Raman scattering studies reveal the remarkable structure and the unusual electronic and phonon properties of carbon nanotubes. In this study, we directly produced boron, B, and nitrogen doped carbon nanotubes by using DC-arc discharge method which normally can be employed for producing carbon nanotubes. We performed experiments without using catalysts and in the presence of Ar gas for producing boron doped carbon nanotubes. At the second and third stages and in the presence of Al_{2}O_{3} and MgO nanopowders as catalysts and nitrogen gas were used for producing nitrogen doped carbon nanotubes. In general, our investigation revealed that some major changes caused by B and N dopants can be observed in the related recorded Raman spectra.

Free-Standing Si and Ge, and Ge/Si Core-Shell Semiconductor Nanowires

100%

Peelaers H., Partoens B., Peeters F.

Acta Physica Polonica A

2012

vol. 122

issue 2

294-298

The properties of free-standing silicon and germanium nanowires oriented along the [110] direction are studied using different first principles methods. We show the corrections due to quasi-particles to the band structures obtained using the local-density approximation. The formation energies of B and P doped nanowires are calculated, both in the absence and presence of dangling bond defects and we link these to experimental results. Furthermore, we report on the phonon properties of pure Si and Ge nanowires, as well as Ge/Si core-shell nanowires, and discuss the differences between them.

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2 Acta Physica Polonica A

1 2012

1 2009

1 Babanejad S.

1 Malekfar R.

1 Partoens B.

1 Peelaers H.

1 Peeters F.

1 Seyyed Hosseini S.

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Dispersive Micro Raman Backscattering Spectroscopy Investigation of Arc Discharge Synthesized CNTs Doped by Boron and Nitrogen

Free-Standing Si and Ge, and Ge/Si Core-Shell Semiconductor Nanowires