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Neutron Transmutation Doped GaP: Optically Detected Magnetic Resonance Studies

100%
Heijmink Liesert B., Godlewski M., Gregorkiewicz T., Ammerlaan C., Goldys E.
Acta Physica Polonica A
|
1991
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vol. 79
|
issue 2-3
401-404
EN
The first direct proof for successful neutron transmutation doping (NTD) of GaP is presented on the basis of optically detected magnetic resonance (ODMR). GaP:S samples grown by the liquid encapsulated Czochralski method were irradiated with thermal neutrons and subsequently annealed at 800°C. In the ODMR experiments the transmuted Ge substitutional on Ga sites was detected. The NTD process was also found to create deep acceptors, the nature of which will be tentatively discussed.
2
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Critical Current Limitations and Irradiation Effects in High-Temperature

80%
Wiśniewski A., Puźniak R., Baran M., Szymczak H.
Acta Physica Polonica A
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1993
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vol. 84
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issue 1
139-164
EN
The discovery of high-temperature superconductors stimulated many groups of researchers to study properties of these materials. From the basic point of view the most important problem is to clarify the mechanism of high-temperature superconductivity. From the practical point of view the most challenging task is to find mechanisms of strong pinning of the vortices, and thereby to obtain materials with high critical current density. The aim of this paper is to discuss problems connected with critical current limitations and to present possibilities which offer irradiation effects with respect to critical current enhancement.
3
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The Luminescence and EPR Characterisation of Neutron Transmutation Doped Gallium Phosphide

80%
Gołdys E., Godlewski M., Sienkiewicz A.
Acta Physica Polonica A
|
1991
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vol. 79
|
issue 2-3
259-262
EN
The photoluminescence and EPR measurements of neutron irradiated and annealed GaP samples are presented. Both methods confirm the presence of neutral Ge_{Ga}. The EPR spectrum gives also an indication of interstitial Ge.
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