Search results

1

Influence of Coimplantation on Activation of Er Emission in Si

100%

Przybylińska H., Hendorfer G., Jantsch W., Palmetshofer L.

Acta Physica Polonica A

|

1995

|

vol. 87

|

issue 2

365-368

EN

The results of high resolution photoluminescence studies of erbium implanted silicon are presented. We show that the apparent enhancement of Er emission by coimplantation with light elements is not due to formation of Er-dopant complexes, but rather to Er forming complexes with defects induced by the implantation process alone.

2

Dopants in Semiconductors Studied by Perturbed Angular Correlation

80%

Bartels J., Lorenz K., Ruske F., Tessema G., Vianden R.

Acta Physica Polonica A

|

2001

|

vol. 100

|

issue 5

585-602

EN

Theγ-γ perturbed angular correlation technique is a very powerful tool for the investigation of dopant incorporation and damage recovery after implantation in semiconductors. The basic principles of the technique will be introduced followed by a discussion of its strengths and limitations. Examples of its application will be given, ranging from cavities in silicon, effects of uniaxial stress on acceptor-donor pairs in silicon to damage recovery in nitride semiconductors like GaN.

3

Study of Si-Implanted and Thermally Annealed Layers of Silicon by Using X-ray Grazing Incidence Methods

61%

Klinger D., Lefeld-Sosnowska M., Pełka J., Paszkowicz W., Gierłowski P., Pankowski P.

Acta Physica Polonica A

|

2002

|

vol. 101

|

issue 5

795-801

EN

This paper reports on the study of structural modifications induced by the implantation process and by the subsequent thermal annealing in near-surface layers of Si single crystals implanted with Si^{2+} ions of energy 140 keV and doses from 1×10^{15} to 1× 10^{16} ions/cm^2. The grazing incidence X-ray diffraction and X-ray reflectivity measurements were applied to determine the thickness and structural composition of the damaged layers. The fitted electron density profiles indicated an existence of an interfacial layer with density higher than the density of Si matrix or near-surface oxide layer. Formation of polycrystalline phases of silicon and silicon oxides is discussed in dependence on the conditions of annealing treatment and implantation dose.

4

Transmission Electron Microscopy Studies of Kr^{+}-Implanted Silicon

61%

Morawiec J.

Acta Physica Polonica A

|

1994

|

vol. 85

|

issue 5

819-824

EN

The structure and the depth distribution of radiation damage caused in ⟨111⟩ Si by high-dose krypton implantations (E_{i} = 150 keV, T_{i} = RT, D_{1} = 5 × 10^{15}, D_{2} = 1 × 10^{16} and D_{3} = 5 × 10^{16} cm^{-2}) have been investigated using techniques of transmission electron microscopy. Formation of secondary defects (Kr bubbles and microtwins) on subsequent different annealing procedures, i.e. during solid phase epitaxial regrowth of damaged layers by conventional furnace heating and liquid phase epitaxial regrowth by applying laser pulses is compared and discussed.

Refine search results

4 Acta Physica Polonica A

1 2002

1 2001

1 1995

1 1994

1 Bartels J.

1 Gierłowski P.

1 Hendorfer G.

1 Jantsch W.

1 Klinger D.

1 Lefeld-Sosnowska M.

1 Lorenz K.

1 Morawiec J.

1 Palmetshofer L.

1 Pankowski P.

1 Paszkowicz W.

1 Pełka J.

1 Przybylińska H.

1 Ruske F.

1 Tessema G.

1 Vianden R.

Influence of Coimplantation on Activation of Er Emission in Si

Dopants in Semiconductors Studied by Perturbed Angular Correlation

Study of Si-Implanted and Thermally Annealed Layers of Silicon by Using X-ray Grazing Incidence Methods

Transmission Electron Microscopy Studies of Kr^{+}-Implanted Silicon