Polycrystalline diamond films were deposited by electron assisted hot filament chemical vapor deposition method on (001) Si substrate using a mixture of propane-butane and hydrogen as working gas. In morphology investigation of diamond films using scanning electron microscope, it was found that diamond film morphology is changing from (111), for hydrocarbon concentration below 0.5 vol.%, via (100) to the so-called "ball-like" structure. The diamond film quality and defect structures in it were investigated by Raman and electron spin resonance spectroscopy for the purpose of obtaining basic knowledge which will aid the growth of defect free epitaxial diamond film for electronic and optical applications.
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