The increase in Τ_{c} for high temperature superconductors can be realized, among others, by appropriate substrate/film combinations. SrLaGaO_{4}-SrLaΑlO_{4} solid solutions were grown by the Czochralski method. The already achieved results allow to obtain single crystals of SrLaΑl_{1-x}Ga_{x}O_{4} with lattice constant a in the range from 0.3754 to 0.3775 nm, and SrLaGa_{1-x}Αl_{x}O_{4} crystals with lattice constant a in the range from 0.3843 to 0.3826 nm. Electron-probe microanalysis along obtained single crystals was used for determination of segregation coefficient between aluminum and gallium ions.
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