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Characterization of Defect Centres in Semiconductors by Advanced ENDOR Techniques

100%

Gregorkiewicz T., Altink H., Ammerlaan C.

Acta Physica Polonica A

1991

vol. 80

issue 2

161-170

The advanced magnetic resonance techniques and their application to the studies of defects in semiconductors will be reviewed. Transient and stationary ENDOR, optically detected ENDOR and double ENDOR variations will be briefly discussed while special attention will be given to the Field-Stepped-ENDOR technique. The successful application of the advanced ENDOR techniques for the structure determination of complex defects will be illustrated by the examples concerning the boron-vacancy complex and thermal donors in silicon and the gallium vacancy in gallium phosphide.

Low-Symmetry Aspects in EPR Spectra of Mn^{2+} at Bi^{3+} Sites in BiVO_{4} Single Crystal

51%

Yeom T., Choh S., Rudowicz C.

Acta Physica Polonica A

1992

vol. 82

issue 3

503-510

Zero-field splitting parameters obtained from EPR X-band experiments of Baran et al. (1985) and Yeom et al. (1992) are reanalyzed. Transformation relations are derived to express the two sets of data in the same axis system. Problems arising from using a truncated zero-field splitting Hamiltonian in fitting the experimental data are elucidated. Low-symmetry aspects in EPR spectra of Mn^{2+} at Bi^{3+} sites in BiVO_{4} single crystal are considered. Good agreement for orthorhombic parameters b^{0}_{2} and b^{2}_{2} is obtained indicating that the centres observed in the two cases are the same Mn centres. The remaining b^{q}_{k} parameters accounting for the actual site symmetry around Mn^{2+} impurity which seems to be lower than orthorhombic in the ferroelastic phase cannot be unambiguously determined from the existing EPR data.

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2 Acta Physica Polonica A

1 1992

1 1991

1 Altink H.

1 Ammerlaan C.

1 Choh S.

1 Gregorkiewicz T.

1 Rudowicz C.

1 Yeom T.

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Characterization of Defect Centres in Semiconductors by Advanced ENDOR Techniques

Low-Symmetry Aspects in EPR Spectra of Mn^{2+} at Bi^{3+} Sites in BiVO_{4} Single Crystal