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EN
Layers of InAs quantum dots grown on [100] GaAs substrates were characterised by photoluminescence and investigated by transmission electron microscopy. Two types of InAs islands were observed in these layers. The islands of the first type had mainly a form of big, elongated pyramids. Most of them were found to be dislocated. On the other hand, the islands of the second type were real self-assembled, coherent quantum dots giving rise to a characteristic photoluminescence band.
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Recent Developments in Scanning Tunneling Microscopy

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EN
Scanning tunneling microscopy and related local probe methods have led to a novel perception of nanometer- and atomic-scale structures and processes. Since the structural information is obtained directly in real space, the scanning probe techniques offer considerable advantages compared with diffraction techniques for the investigation of non-periodic structures at solid surfaces. In addition, the local probe methods allow to study almost any kind of physical property of microstructures with submicron down to atomic resolution.
EN
The dynamics of the lattice relaxation processes were investigated us­ing a reflection of a high energy electron diffraction analysis system dur­ing growth by molecular beam epitaxy of ZnTe/Cd_{1-x}Ζn_{x}Te/Cd_{0.5}Mn_{0.5}Te buffers on GaAs substrates. The variation of the lattice parameter recorded by the high energy electron diffraction during the growth was later confirmed by an analysis of high resolution transmission electron microscopy images. We report also on an observation of oscillations of the lattice parameter during the deposition of several first layers of ZnTe on CdTe.
EN
Using complementary X-ray and electron-optical methods, a ZnSe(Co) crystal with natural face was investigated. X-ray diffraction methods such as double-crystal X-ray reflection topography, double-crystal diffractometry for rocking curve measurements, precise lattice constant measurements by the Bond technique were used for crystal structure characterization and X-ray fluorescence method for studies of chemical composition along the crystal. The scanning electron microscopic image of the crystal surface and reflection diffraction of the high-energy electrons enriched the crystal structure characterization. It was shown that X-ray characterization and reflection high-energy electron diffraction can be regarded as very important complementary tools for non-destructive investigation of the ZnSe(Co) crystal surface layers.
EN
In this paper we present experimental results on influence of Al content on the structure and saturation magnetostriction of Fe-Al-Cu-Nb-Si-B alloys after heat treatment. Transmission electron microscopy observations confirmed the existence of nanocrystalline structure after annealing at 490°C and 550°C for all samples. The crystallization temperature of FeSi phase and the temperature at which the polycrystalline transformation starts were determined from temperature dependence of electrical resistivity. Aluminium slightly decreases the first crystallization temperature and considerably decreases the saturation magnetostriction in as-quenched state.
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EN
The following paper presents a study on laser-ablated silicon nitride films, obtained by the laser reactive ablation method. The aim of this paper is to investigate silicon nitride film surfaces, first by scanning electron microscopy and then, at a better resolution and a greater magnification, by the scanning (atomic) force microscopy technique.
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Interfaces in Composite Materials

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EN
The mechanical functions of the fibre/matrix interlayer as well as its quantitative parameter dependencies and their influence on the properties of the composite system are discussed, with the theoretical model being considered under realistic conditions. Corresponding to that a number of interface structure phenomena of some advanced composite materials, revealed by high voltage and high resolution electron microscopy, are discussed with respect to their relevance to the control of composite properties, including complex interlayer systems, which are produced by fibre coating as well as by chemical solid state transport and exchange reactions. The effects of hooking-together, binding, internal microcracking, and sublayer formation are demonstrated, and in some cases correlated with the mechanical behaviour of the materials as revealed by in situ tensile tests.
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Surface Effects in Fe-Based Nanocrystalline Alloys

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EN
The microstructural and Mossbauer investigations of FeZrBCu nanocrystalline alloy are presented. The results obtained indicate that fine bcc-Fe grains do possess identifiable surface properties which arise from the symmetry restriction at grain boundary.
EN
Transmission electron microscopy and X-ray diffraction proved chain ladder incommensurate single crystal structure of investigated samples. The incommensurate ratio was determined from the X-ray and electron diffraction being equal to 0.704. Diffuse scattering intensities localised on the planes perpendicular to the c*-axis and passing through the spots originating from the periodicity of chain sublattice were detected. High-angle grain boundary or twinning formed by rotation of 33.3° around [100] direction was observed. High-resolution electron microscopy images revealed the stacking faults in ac planes.
Acta Physica Polonica A
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1994
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vol. 85
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issue 5
819-824
EN
The structure and the depth distribution of radiation damage caused in ⟨111⟩ Si by high-dose krypton implantations (E_{i} = 150 keV, T_{i} = RT, D_{1} = 5 × 10^{15}, D_{2} = 1 × 10^{16} and D_{3} = 5 × 10^{16} cm^{-2}) have been investigated using techniques of transmission electron microscopy. Formation of secondary defects (Kr bubbles and microtwins) on subsequent different annealing procedures, i.e. during solid phase epitaxial regrowth of damaged layers by conventional furnace heating and liquid phase epitaxial regrowth by applying laser pulses is compared and discussed.
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