Search results

Search:
in the keywords: 61.10.Yh

Sort By:

Limit search:

White Beam Synchrotron Topographic Characterisation of Silicon Wafers Directly Bonded by Oxide Layer

100%

Wierzchowski W., Wieteska K., Graeff W., Gawlik G., Pawłowska M.

vol. 96

issue 2

283-288

Various types of layer structures obtained by direct bonding of oxidised silicon wafers were studied by means of different X-ray topographic methods using white synchrotron beam and the observation of selective etching pattern using scanning electron microscopy and optical microscopy with Nomarski contrast. In the present investigation the particularly important results were obtained with synchrotron section topography, which revealed different defects caused by bonding of thick wafers, in particular the dislocations and microcracks. The different situation was observed in the case of bonding with a very thin layer separated from a silicon substrate by high dose proton implantation. In this case a thin layer accommodated practically all induced strain and the bonded oxidised thick substrate remained defect-free in its inner volume.

Absolute Structure Determination in Absence of Heavy Scatterers

80%

Grochowski J.

Acta Physica Polonica A

1997

vol. 91

issue 4

745-756

Methods of absolute structure determination for molecules containing only light atoms (C, H, N, O) are discussed in the paper. This experimentally difficult problem has a direct application in the structure determination of naturally originated compounds and modern chiral drugs. Several experimental methods of absolute structure determination like electron diffraction, multiple X-ray diffraction and X-ray anomalous scattering techniques are briefly discussed and compared. An application of dedicated azimuthal scan method for the case of hexamethylenetetramine is given as an illustration of this technique.

Refine search results

2 Acta Physica Polonica A

1 1999

1 1997

1 Gawlik G.

1 Graeff W.

1 Grochowski J.

1 Pawłowska M.

1 Wierzchowski W.

1 Wieteska K.

Search results

White Beam Synchrotron Topographic Characterisation of Silicon Wafers Directly Bonded by Oxide Layer

Absolute Structure Determination in Absence of Heavy Scatterers