Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
enabled [disable] Abstract
Number of results

Results found: 2

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

Search:
in the keywords:  52.70.Gw
help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
EN
Flashover voltage and picosecond risetime of breakdown in pressurized SF_{6} gas is studied on a coaxial line. Gas pressure is varied from 1 to 19 bar. The homogeneous field gap has an opening from ca. 0.2 to 0.9 mm, and flashover voltages reach 120 kV. Measurements are performed using a D-dot probe with 16 to 20 GHz real-time oscilloscopes and a 50 GHz sampling oscilloscope. Measured risetimes are down to ca. 50 ps, and the dependence of voltage collapse on gas density and electric field between the electrodes is reported. Integrity of data is analyzed and experimental results are compared with present theory found in literature and previous results measured with alternative real-time systems.
Open Physics
|
2004
|
vol. 2
|
issue 1
1-11
EN
Starting from an analytical macroscopic/phenomenological model yielding the self-bias voltage as a function of the absorbed radio-frequency (rf) power of an asymmetric capacitively coupled discharge in NF3 this paper studies the dependence of the ion flux onto the powered electrode on the gas pressure. An essential feature of the model is the assumption that the ions' drift velocity in the sheath near the powered electrode is proportional to E α, where E=−ΔU (U being the self-bias potential), and α is a coefficient depending on the gas pressure and cross section of elastic ion-neutral collisions. The model also considers the role of γ-electrons, stochastic heating as well as the contribution of the active electron current to the global discharge power balance. Numerically solving the model's basic equations one can extract the magnitude of the ion flux (at three different gas pressures) in a technological etching device (Alcatel GIR 220) by using easily measurable quantities, notably the self-bias voltage and absorbed rf power.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.