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1
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Cavity-Polariton Effects in II-VI Microcavities

100%
André R., Boeuf F., Heger D., Dang L., Romestain R., Bleuse J., Müller M.
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vol. 96
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issue 5
511-524
EN
Semiconductor microcavities are monolithic multilayer heterostructures grown by molecular beam epitaxy. They allow the confinement along the growth axis of both photons between the Bragg reflectors and excitons in quantum wells. If the exciton-photon coupling matrix element is large enough compared to the line width, the system is said to be in the strong coupling regime. In that case a quantum well exciton couples to another discrete state: the photon mode of a planar microcavity with the same in-plane wave vector, to give rise to quasi-stationary states named cavity polaritons. In this regime, the Fermi golden rule does not hold any more and the optical properties, linear or nonlinear, are strongly related to polariton features. A review of the optical properties of CdTe-based microcavities operating in the strong coupling regime is given in this paper. The strength of the exciton-photon coupling, dynamic optical properties, and relaxation processes along polariton dispersion curves will be discussed, as well as stimulated emission of cavity polariton luminescence.
2
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Dynamical and Tuneable Modulation of the Tamm Plasmon/Exciton-Polariton Hybrid States Using Surface Acoustic Waves

100%
Buller J., Cerda-Méndez E., Balderas-Navarro R., Santos P.
Acta Physica Polonica A
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2016
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vol. 129
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issue 1a
A-26-A-29
EN
In this work, we discuss theoretically the formation of the Tamm plasmon/exciton-polariton hybrid states in an (Al,Ga)As microcavity and their modulation by surface acoustic waves. The modulation of the Tamm plasmon/exciton-polariton states origins in the change of the excitonic band gap energy and the thickness change of the sample structure layers due to the induced strain fields by surface acoustic waves. The frequency f_{SAW} of the acoustic modulation of the Tamm plasmon/exciton-polariton states is limited by the thickness of the upper distributed Bragg reflector. For the Tamm plasmon/exciton-polariton states in Al_xGa_{1-x}As/GaAs structures f_{SAW} is in the range of 370 MHz while f_{SAW} in GHz range is possible for the parametric Tamm plasmon/exciton-polariton states. In both cases, the acoustic modulation is several meV for typical acoustic power levels.
3
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Simulation of Modes in Terahertz Quantum-Cascade Microring and Microdisk Lasers

100%
Tamošiūnas V., Kancleris Z., Tamošiūnienė M.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
917-920
EN
In our contribution, we report on finite-difference time-domain simulations of modes in microring and microdisk terahertz quantum-cascade lasers with external radii of 100 μm and less. Our simulations have revealed a possibility of low radiative loss for lowest and second order whispering gallery modes in such devices, even when the effective mode volume is reduced below the cubic wavelength.
4
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Stimulated Scattering of Microcavity Polaritons

100%
Bloch J., Senellart P., Thierry-Mieg V., Marzin J. Y.
Acta Physica Polonica A
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2000
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vol. 98
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issue 3
295-302
EN
We report on cw optical experiments performed in a semiconductor microcavity containing a single quantum well in the strong coupling regime. Angularly resolved photoluminescence measurements under non-resonant excitation show the collapse of a relaxation bottleneck as the excitation power is increased. As a result, the emission close to k_{∥}=0 presents a non-linear behavior. In a two-beam experiment we resonantly inject polaritons at k_{∥}=0 and show that relaxation from states with large in-plane wave vector toward k_{∥}=0 is stimulated by the polariton final state population.
5
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Physics of Stimulated Emission in Blue Semiconductor Lasers

100%
Nurmikko A.
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vol. 95
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issue 1
137-152
EN
In this article an overview is given about the special properties of the new blue and green semiconductor lasers, with emphasis on those basic processes that power the stimulated emission in these compact devices. Of special interest are the strong electron-hole Coulomb correlations which can be spectroscopically identified as unique features in quantum wells of wide band gap semiconductors.
6
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Magnetic Field Induced Redistribution of Exciton-Polariton Density on Confined Modes

88%
Piętka B., Szczytko J., Łusakowski J., Nardin G., Léger Y., Morier-Genoud F., Deveaud-Plédran B.
Acta Physica Polonica A
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2012
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vol. 122
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issue 6
1093-1095
EN
The influence of magnetic field on confined exciton-polariton modes inside a semiconductor microcavity is discussed. The three-dimensional confinement for exciton-polaritons is achieved by the mesa structures confining the photonic part of polaritons. We observe a strong increase of the polariton emission intensity and we argue that this effect is due to the change of the oscillator strength of the excitonic component of polaritons and the change of the excitonic content in polariton state as the magnetic field increases.
7
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Angular and Temperature Tuning of Emission from Vertical-External-Cavity Surface-Emitting Lasers (VECSELs)

88%
Wójcik-Jedlińska A., Muszalski J., Bugajski M., Łukowski M.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1437-1443
EN
In this paper we demonstrate how the tuning of the VECSEL heterostructure can be precisely determined. Since the VECSEL active region is embodied in a microcavity, the photoluminescence signal collected from the chip surface is modified by the resonance of this cavity. The angle resolved photoluminescence measurements combined with the temperature tuning of the structure allowed us to precisely determine VECSEL emission features. The investigated structure consists of GaAs cavity with six InGaAs quantum wells and is designed for lasing at 980 nm.
8
Content available remote

Fast Speed Semiconductor Ring Lasers Using Optical Injection Locking

88%
Memon M., Fathallah H., Yu S.
Acta Physica Polonica A
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2013
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vol. 123
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issue 2
180-182
EN
Theoretical study for frequency response and modulation bandwidth of slave semiconductor ring laser in the master-slave configuration using optical injection locking has been investigated. Equations for frequency response of optical injection locking-semiconductor ring laser to the direct modulation, amplitude modulation of master laser, respectively, are derived and simulated. Enhancement in the modulation bandwidth of >100 GHz is reported between negative to positive detuning frequency and increasing injection power ratio.
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