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Modeling of Plasmon-Enhanced Photoluminescence of Si Nanocrystals Embedded in Thin Silicon-Rich Oxinitride Layer

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Édes Z., Křápek V., Šikola T.
Acta Physica Polonica A
|
2016
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vol. 129
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issue 1a
A-70-A-72
EN
Plasmon-enhanced photoluminescence of silicon nanocrystals embedded in silicon-rich oxinitride thin film is calculated using finite-difference time-domain simulations. Emitters are represented as point-like dipoles and the photoluminescence enhancement is calculated depending on the emitter's position and polarization with respect to the plasmonic metal nanoparticle placed on top of the layer. We show that the photoluminescence enhancement is dominated by the excitation enhancement even for tuning the metal nanoparticle size to the emission wavelength.
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Use of Quantum Mechanical Methods to Obtain a Bohm-Type Coefficient of Diffusion. Part II

75%
Jiménez-Domínguez H.
Acta Physica Polonica A
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2011
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vol. 119
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issue 6
798-802
EN
The research reported in an article previously published in this journal is pursued here further on. A staircase profile of the graphical representation of the absolute value of the expression for Bohm-type diffusion in two dimensions is analyzed allowing the suggestion that its shape could be related to the well-known structure of levels of the quantized square of the guiding center radius vector and that this structure could be responsible for the appearance of the successive steps in such a profile. When these considerations are taken into account, the expression for Bohm-type diffusion in two dimensions is normalized according to the formula for the quantized square of the guiding center radius vector and a diffusion coefficient whose value is 4/π times the Bohm diffusion coefficient is obtained for large values of the independent variable.
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