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(n,2n) and (n,3n) Neutron Induced Reaction Cross Sections above 8 MeV

100%
Salman H., Ünal R., Oruncak B., Akçaalan U., Yalim H.
Acta Physica Polonica A
|
2015
|
vol. 128
|
issue 2B
B-231-B-235
EN
Neutron induced reaction cross sections for (n,2n) and (n,3n) have been calculated in the energy range between 8 MeV and 26 MeV. Calculations were made for the target nuclei; ^{45}Sc, ^{59}Co, ^{89}Y, ^{93}Nb, ^{103}Rh, ^{169}Tm, ^{175}Lu, ^{181}Ta, ^{197}Au, ^{209}Bi. Calculated results were compared with the available data in EXFOR. Model calculations of present data indicated clearly that some reported data from measurements failed to separate (n,2n) and (n,3n) contributions.
2
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Theoretical Photoneutron Cross Sections and the Effect of Gamma Strength Functions for W, Ag, Nb

63%
Karpuz Demır N., Çetın B.
Acta Physica Polonica A
|
2017
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vol. 132
|
issue 3
1076-1079
EN
In nuclear reactions the usage of high energy gamma particles, as projectiles, has some essential advantages for studying of nuclear structure and reaction mechanisms. In this work, (γ,n) reaction cross sections of ¹⁸⁶W, ¹⁰⁷Ag and ⁹³Nb have been calculated with TALYS 1.6 nuclear reaction simulation code. The main aim of this study is to investigate the effects of preequilibrium and the gamma strength functions on ¹⁸⁶W, ¹⁰⁷Ag and ⁹³Nb. The calculated results have been discussed and compared with the experimental data.
3
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Calculation of Gamma Strength Functions for Photonucleon Reactions

63%
Karpuz N., Mavi B., Akkurt İ.
Acta Physica Polonica A
|
2015
|
vol. 128
|
issue 2B
B-414-B-416
EN
The cross section for (γ,N) reaction is important for investigation of nuclear structure, especially in low-energy giant dipole resonance (GDR). The total cross sections of ^{12}C(γ,n)^{11}C and ^{12}C(γ,p)^{11}B reactions, calculated using TALYS 1.2 nuclear code, are 15.5 to 40 MeV and 15 to 110 MeV, respectively. In the calculations, the default pre-equilibrium models and Brink-Axel Lorentzian model in all of the gamma strength functions have been used. The effects of the gamma strength function on the cross section exchange data has determined the most compatible model type. The results are compared with the experimental data from the EXFOR database and the evaluated nuclear data from TENDL-2012. Our calculated results are in good agreement with the previously reported experimental results.
4
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Cross Sections Calculation of (γ,N) Reactions for Some Elements

63%
Karpuz N., Boz M., Mavi B., Akkurt I.
Acta Physica Polonica A
|
2015
|
vol. 128
|
issue 2B
B-411-B-413
EN
Photonuclear processes can play an important role in the detection of nuclear materials. For this purpose, in this study, the (γ,n) and (γ,p) cross sections as functions of photon energy in medium weight nuclei were calculated. Calculations have been made of the cross sections for some of the (γ,n) and (γ,p) reactions in ^{28}Si, ^{32}S, ^{56}Fe and ^{63}Cu nuclei using the TALYS 1.6 nuclear code with incident photons of 7-40 MeV. These calculated cross sections are compared with each other and with the earlier experimental results from the literature (EXFOR). Calculated results (^{56}Fe(γ,n), ^{63}Cu(γ,n), ^{56}Fe(γ,p) and ^{63}Cu(γ,p) cross sections) are in very good agreement with the experimental data. However, because of the Coulomb barrier, the photoproton cross sections for ^{32}S, ^{56}Fe and ^{63}Cu target nuclei, are smaller than the photoneutron cross sections.
5
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Collision Cascade and Spike Effects of X-ray Irradiation on Optoelectronic Devices

44%
Salleh S., Abdul Amir H., Kumar Tiwari A., Pien Chee F.
Acta Physica Polonica A
|
2016
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vol. 130
|
issue 1
93-97
EN
Bombardment with high energy particles and photons can cause potential hazards to the electronic systems. These effects range from degradation of performance to functional failure, which can affect the operation of a system. Such failures become increasingly likely as electronic components are getting more sophisticated, while decreasing in size and tending to a larger integration. In this paper, the effects of X-ray irradiation on a plastic encapsulated infrared light emitting diode, coupled to a plastic encapsulated silicon infrared phototransistor, with both of them being electrically isolated at ON and OFF modes, are investigated. All the devices are exposed to a total dose of up to 1000 mAs. The electrical parameters of the optoelectronic devices during the radiation exposure and at post-irradiation are compared to the pre-irradiation readings. The findings show that the highest degradation occurs at low dose of exposure; beyond 100 mAs the relative decrease in collector current of the phototransistor is gradually reduced. The most remarkable feature found, is the operational dependence of the bias collector current, indicating a higher degradation for low bias forward current of the light emitting diode. The degradation induced at the forward current of the light emitting diode by X-rays irradiation is almost negligible whereas a decrease of the rate of change in current transfer ratio is significant during the X-ray irradiation. The results show that there is no significant difference between current transfer ratio of ON mode and OFF mode radiation. It is observed that the operating mode of the optoelectronic devices after exposure to 1000 mAs of X-ray irradiation contributes no major variation in the degree of damage.
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