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Ultrahigh Frequency Components in the Hot Electron Photomagnetoelectric Response of Strongly Photoexcited Narrow-Gap Semiconductors

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Shatkovskis E., Galickas A., Kiprijanovič O.

Acta Physica Polonica A

2005

vol. 107

issue 2

271-274

A photomagnetoelectric effect has been investigated in semiconductors InAs and Cd_xHg_{1-x}Te (x=0.2 and 0.26) excited by Q-switched neodymium-YAG laser. The photomagnetoelectric signal undergos double-sign-inversion when the intensity of the exciting light pulses exceeds a critical value I_c=5×10^{24} photons/(cm^2 s) for InAs and (1-4)×10^{24} photons/(cm^2 s) for Cd_xHg_{1-x}Te samples. It is shown that a frequency spectrum of photomagnetoelectric response is broadened significantly in the region of high frequencies. In general three frequency bands were distinguished. From this investigation it follows that using laser pulses of a duration t_{opt} 1-10 ps the photomagnetoelectric signal in the terahertz range may be generated.

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1 Acta Physica Polonica A

1 2005

1 Galickas A.

1 Kiprijanovič O.

1 Shatkovskis E.

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Ultrahigh Frequency Components in the Hot Electron Photomagnetoelectric Response of Strongly Photoexcited Narrow-Gap Semiconductors