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1

Modeling of Plasmon-Enhanced Photoluminescence of Si Nanocrystals Embedded in Thin Silicon-Rich Oxinitride Layer

100%

Édes Z., Křápek V., Šikola T.

Acta Physica Polonica A

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2016

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vol. 129

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issue 1a

A-70-A-72

EN

Plasmon-enhanced photoluminescence of silicon nanocrystals embedded in silicon-rich oxinitride thin film is calculated using finite-difference time-domain simulations. Emitters are represented as point-like dipoles and the photoluminescence enhancement is calculated depending on the emitter's position and polarization with respect to the plasmonic metal nanoparticle placed on top of the layer. We show that the photoluminescence enhancement is dominated by the excitation enhancement even for tuning the metal nanoparticle size to the emission wavelength.

2

Type-I and Type-II Confinement in Quantum Dots: Excitonic Fine Structure

100%

Křápek V., Klenovský P., Šikola T.

Acta Physica Polonica A

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2016

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vol. 129

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issue 1a

A-66-A-69

EN

We have theoretically studied type-I and type-II confinement in InAs quantum dots with GaAs_{1-y}Sb_y capping layer. The character of the confinement can be adjusted by the Sb content. We have found that upon the transition from type-I to type-II confinement the hole wave functions change the topology from a compact shape to a two-segment shape, resulting in the complex changes in the exciton fine structure splitting with zero values at narticular compositions. Additionally, a high exciton radiative recombination probability is preserved even in type-II. This allows to design strongly luminescent quantum dots with naturally low fine structure splitting, which could serve as sources of entangled photon pairs for quantum communication.

3

Analysis of Thin Films by Time-of-Flight Low Energy Ion Scattering

88%

Průša S., Kolíbal M., Bábor P., Mach J., Šikola T.

Acta Physica Polonica A

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2007

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vol. 111

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issue 3

335-341

EN

In the paper the design and application of a time-of-flight low energy ion scattering instrument built into an UHV complex deposition and analytical apparatus is described. A special attention is aimed at demonstrating the ability of time-of-flight low energy ion scattering to analyse near-to-surface layers of thin films prepared both ex situ and in situ. It is shown that the broadening of peaks in time-of-flight low energy ion scattering spectra can be attributed to multiple scattering and inelastic losses of ions in deeper layers. As a result of that, the peak width of ultrathin films depends on their thickness.

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1 Édes Z.

Modeling of Plasmon-Enhanced Photoluminescence of Si Nanocrystals Embedded in Thin Silicon-Rich Oxinitride Layer

Type-I and Type-II Confinement in Quantum Dots: Excitonic Fine Structure

Analysis of Thin Films by Time-of-Flight Low Energy Ion Scattering