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Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields

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Požela K., Požela J., Jucienė V., Vasil'evskii I., Galiev G., Klimov E., Sužiedėlis A., Žurauskienė N., Stankevič V., Keršulis S., Paškevič Č.

Acta Physica Polonica A

2011

vol. 119

issue 2

170-172

The following peculiarities of electron transport in In_{0.53}Ga_{0.47}As/In_{0.52}Al_{0.48}As quantum wells with δ-Si-doped In_{0.52}Al_{0.48}As barriers at high electric fields are discovered: (1) an enhancement of electron mobility by inserting the InAs phonon wall into the In_{0.53}Ga_{0.47}As/In_{0.52}Al_{0.48}As quantum well, as well as increasing the InAs content in the modulation-doped In_{0.8}Ga_{0.2}As/In_{0.7}Al_{0.3}As heterostructure; (2) a large decrease in electron mobility and a change of electron density with increasing electric field in the range of 1-4 kV/cm; (3) a magnetic field dependence of the threshold electric field for intervalley scattering of electrons; and (4) microwave current oscillations in high electric fields.

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1 Acta Physica Polonica A

1 2011

1 Galiev G.

1 Jucienė V.

1 Keršulis S.

1 Klimov E.

1 Paškevič Č.

1 Požela J.

1 Požela K.

1 Stankevič V.

1 Sužiedėlis A.

1 Vasil'evskii I.

1 Žurauskienė N.

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Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields