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Acta Physica Polonica A
|
1998
|
vol. 94
|
issue 3
526-530
EN
Here we show that the enhancement of exchange field at the nonmagnetic- semimagnetic semiconductor interface can be described by δ-localized exchange field. In this model, the wave functions of electron confined in quantum well with semimagnetic barriers can be found analytically for an arbitrary orientation of magnetic field B with respect to growth axis C. Two cases corresponding to B∥C and B⊥C are considered. The comparison of present approach with experimental data shows that the proposed method is an efficient tool for interface investigation in 2D quantum structures.
EN
Strong optical polarization anisotropy observed previously in the exciton photoluminescence from [100]-oriented quantum wells subjected to the in-plane magnetic field is described within microscopic approach. Developed theory involves two sources of optical polarization anisotropy. The first of them is due to correlation between ψ-functions phases of electron and heavy hole which arise owing to electron Zeeman spin splitting and joint manifestation of low-symmetrical and Zeeman interactions of heavy holes in an in-plane magnetic field. Other optical polarization anisotropy source stems from the admixture of light-holes states to heavy-holes ones by low-symmetry interactions. The heavy hole splitting caused by these interactions separately and the effects of their interference are analyzed. The domination of C_{2v} low-symmetry interaction connected with quantum wells interfaces and/or in-plane deformations takes place in relatively low magnetic field. The directions of this perturbation determine main directions of the π-periodical optical polarization anisotropy. The cubic anisotropy of valence band can add the π/2-periodical contribution to the optical polarization anisotropy. In the case of quantum wells with semimagnetic barriers the Zeeman term contribution can reach value, which dominates the C_{2v} ones, and crossover to polarization connected with magnetic field direction may be observed in low temperature.
EN
The general review of the history and present-day situation of diluted magnetic semiconductor investigation in Ukraine is given by S. Ryabchenko. Some noteworthy results of diluted magnetic semiconductor investigation obtained in Ukraine are pointed out. The main features of the present day situation are mentioned also. As an example of last diluted magnetic semiconductor investigations, the new result obtained by Abramishvili, Komarov, Ryabchenko, Semenov, Kyrychenko and Dubowski for Cd_{1-x}Mn_{x}Te/CdTe/Cd_{1-x}Mn_{x}Te quantum well structures grown by laser ablation method are presented. A weak additional line was observed in the reflectivity spectra of a 27 Å wide quantum well with x= 0.11 in the barrier. Such additional line has not been observed in spectra of similar molecular beam epitaxy grown structures. Based on the theoretical computations of the energies and the relation of intensities of the main and additional lines we conclude that this line might be associated with hh2 → e1 transitions, which ceases to be forbidden in the presence of technologically caused asymmetry of quantum well potential profile.
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