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1

Theoretical Studies of the Local Structures and EPR Spectra for VO^{2+} in MB_4O_7 (M = Zn, Cd) Glasses

100%

Li C., Zheng X.

Acta Physica Polonica A

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2014

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vol. 125

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issue 1

73-76

EN

Electron spin resonance spectral parameters (g factors g_{∥}, g_{⊥} and hyperfine structure constants A_{∥}, A_{⊥}) of a tetragonal V^{4+} centers in MB_4O_7 (M = Zn, Cd) are theoretically investigated by using the perturbation formulae for a 3 d^1 ion in tetragonally compressed octahedra. In these formulae, the contributions to the g factors from the tetragonal distortion, characterized by the tetragonal field parameters D_{s} and D_{t} are taken into account by considering the local structures of the ligand octahedron around the V^{4+} due to the Jahn-Teller effect. Based on the calculations, the ligand octahedra around V^{4+} are suggested to suffer about 5.7% and 4.3% relative compression along C_4 axis for MB_4O_7 glasses with M = Zn and Cd, respectively, and negative signs of the hyperfine structure constants A_{∥} and A_{⊥} for V^{4+} centers in MB_4O_7 glasses were suggested in the discussion.

2

Aspects of the Scattering and Impedance Properties of Chaotic Microwave Cavities

71%

Hemmady S., Zheng X., Antonsen T., Ott E., Anlage S.

Acta Physica Polonica A

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2006

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vol. 109

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issue 1

65-71

EN

We consider the statistics of the impedance Z of a chaotic microwave cavity coupled to a single port. We remove the non-universal effects of the coupling from the experimental Z data using the radiation impedance obtained directly from the experiments. We thus obtain the normalized impedance whose probability density function is predicted to be universal in that it depends only on the loss (quality factor) of the cavity. We find that impedance fluctuations decrease with increasing loss. The results apply to scattering measurements on any wave chaotic system.

3

CO2 concentration affects in vitro pig embryo developmental capacity

61%

Zhang L., Lin Z., Bi Y., Zheng X., Xiao H., Hua Z.

Polish Journal of Veterinary Sciences

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2018

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vol. 21

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issue 3

4

A new adaptation for in vitro co-culture of single porcine parthenogenetic embryos using feeder cells

52%

Zhang L., Lin Z., Hua Z., Zheng X., Xiao H., Hua W., Ren H., Zhu Z., Molenaar A., Bi Y.

Polish Journal of Veterinary Sciences

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2019

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issue 4

5

Impact of different sources of donor cells upon the nuclear transfer efficiency in Chinese indigenous Meishan pig

52%

Liu X., Hua Z., Zhang L., Zheng X., Xiao H., Xu G., Bi Y., Hua W., Li L., Ren H.

Polish Journal of Veterinary Sciences

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2016

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issue 1

6

Ultrafast Phenomena in Freestanding LT-GaAs Devices

42%

Marso M., Mikulics M., Adam R., Wu S., Zheng X., Camara I., Siebe F., Förster A., Güsten R., Kordoš P., Sobolewski R.

Acta Physica Polonica A

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2005

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vol. 107

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issue 1

109-117

EN

We report on the fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs. The MBE-grown low-temperature GaAs layers are lifted from the native GaAs substrate and transferred on top of variety of host substrates. The freestanding devices exhibit breakdown electrical fields above 200 kV/cm and dark currents below 3×10^{-7} A at 100 V bias. Device photoresponse shows 0.55 ps wide electrical transients with voltage amplitudes up to 1.3 V, measured using an electro-optical sampling technique with 100 fs wide laser pulses. Photomixing experiments at 460 GHz yield a 9 times higher output power for the freestanding device on Si/SiO_2 host substrate compared to the native substrate.

Refine search results

Theoretical Studies of the Local Structures and EPR Spectra for VO^{2+} in MB_4O_7 (M = Zn, Cd) Glasses

Aspects of the Scattering and Impedance Properties of Chaotic Microwave Cavities

CO2 concentration affects in vitro pig embryo developmental capacity

A new adaptation for in vitro co-culture of single porcine parthenogenetic embryos using feeder cells

Impact of different sources of donor cells upon the nuclear transfer efficiency in Chinese indigenous Meishan pig

Ultrafast Phenomena in Freestanding LT-GaAs Devices