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Induced Absorption in Gadolinium Gallium Garnet Irradiated by High Energy ^{235}U Ions

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Potera P., Ubizskii S., Sugak D., Schwartz K.
Acta Physica Polonica A
|
2010
|
vol. 117
|
issue 1
181-183
EN
The present work is devoted to investigation of optical absorption in pure Gd_{3}Ga_{5}O_{12} (GGG) single crystals in the spectral range 0.2-1.1 μm induced under influence of the ^{235}U ions irradiation with energy 2640 MeV and a fluence 10^{9}-10^{11} cm^{-2}. The induced absorption for 10^{9} cm^{-2} is caused by recharging of point defects, both growth ones and impurities. After irradiation by ^{235}U ions with fluences starting from 3 × 10^{9} cm^{-2} the absorption rise is probably caused by contribution of the lattice destroying as a result of heavy ion bombardment as well as radiation displacement defects.
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