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EN
The R-matrix method provides a complete theoretical framework for the treatment of low energy electron collisions. The method has been implemented into code Quantemol-N (EE) with a goal to provide users in plasma modeling, swarm studies and other applications with an option to calculate the missing data. In this paper we report on cross sections and rate coefficients for hydrogen bromide obtained by using Quantemol-N. The total cross section has been calculated both with and without Born corrections.
EN
Refined control of etched profiles is one of the most important tasks of micro (nano) electro mechanical systems manufacturing process. In spite of its wide use, the simulation of etching for micro (nano) electro mechanical systems applications has been so far a partial success only, although a great number of commercial and academic research tools dedicated to this problem are developed. In this paper we describe an application of the sparse field method for solving level set equations in 3D anisotropic wet etching of silicon with potassium hydroxide (KOH). Angular dependence of the silicon etching rate is determined on the basis of the silicon crystal symmetry properties. Some examples illustrating developed methodology are given.
EN
In this paper we have presented our simulation studies of 2.4 GHz microwave plasma production under the electron cyclotron resonance with an idea to expand the plasma generation conditions into the much lower pressure range and much shorter gap length. As the first for this purpose, we have focused on the influences of applied magnetic field, gas pressure and gap length on the breakdown and maintenance of plasmas. Calculations were performed by using a one-dimensional particle-in-cell/Monte Carlo collisions code with three velocity components. The obtained simulation results are in a good agreement with the available experimental data providing an insight into the resonant electron acceleration for ECR condition and the resonant electron confinement for the 2nd harmonic ECR. In addition, analytical expressions for the breakdown voltage and the trapping field have been derived.
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Breakdown Phenomena in Water Vapor Microdischarges

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EN
The gas breakdown at the large gap sizes is reasonably well understood. However, the breakdown phenomenon in microgaps is still not sufficiently explored. The high electric fields realized in small gaps combined with the lowering of the potential barrier, seen by the electrons in the cathode as ion approaches lead to ion-enhanced field emission leading to deviations from the standard Paschen law. In this paper, semi-empirical expressions for the breakdown voltage based on the fitting of numerical solutions of the DC breakdown criteria in microdsicharges have been derived. In the standard breakdown criteria the secondary emission coefficient that incorporates the enhancement of the secondary electron emission has been included. The obtained expressions can be used for determination the pressure and the gap dependence of the breakdown field strength in the water vapor, separately.
EN
Recent development of microwave pulse generators, which are now capable of delivering very short and very intensive pulses requires properly generalized classical breakdown theory. On the other hand, the trend to design microwave devices as small and compact as possible, leads to a concern about the concomitant breakdown strength of the construction, involving more complicated geometries, such as in microwave resonators and filters. In this paper, several aspects of microwave breakdown field strength in commercially available resonator designs and filters are presented and analyzed. The numerical predictions based on the Slater theorem are compared with the analytical results and predictions of the fluid approach, demonstrating very good agreement.
EN
Transport coefficients for electrons in mixtures of CF_{4} with Ar and O_{2} for ratios of the electric field to the gas number density E/N from 1 Td to 1000 Td (1Td=10^{-21} V m^2) are presented. The analysis of non-conservative collisions revealed a range of the reduced electric field E/N where electron attachment introduced by radicals significantly changes electron kinetics obtained for mixtures without dissociation of CF_{4} gas. The results obtained by using a simple, Two Term solutions for Boltzmann's equation are verified by Monte Carlo simulations. It was found that three body attachments for oxygen is not significant for pressures that are standard in plasma etching equipment i.e. below 1 Torr. Furthermore, the attachment to CF, CF_{2} and CF_{3} at low mean energies is significant, several orders of magnitude. At the same time the mean energy and energy distribution functions for the given E/N are the same as in unperturbed gas mixture. The large changes of the attachment rate are sufficient to change the nature of plasmas and turn them into ion-ion plasmas with very few electrons for realistic abundances.
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