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1
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4f Shell of Gd^{2+} and Gd^{3+} Ions in Sn_{1-x}Gd_{x}Te - Resonant Photoemission Study

100%
Kowalski B. J., Gołacki Z., Guziewicz E., Orłowski B. A., Johnson R. L.
Acta Physica Polonica A
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1997
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vol. 92
|
issue 5
875-878
EN
Resonant photoemission spectra of Sn_{1-x}Gd_{x}Te (x=0.02 and 0.08) measured for the photon energy range 142 to 151 eV show the valence band density of states distribution and the Gd 4f derived maximum. The energy position of the J=0 component of the Gd 4f maximum was determined and used as a measure of the Gd 4f shell binding energy. The electrostatic model of core level shifts was used to interpret the difference in the Gd 4f binding energies observed for x=0.02 and x=0.08.
2
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Fe 3d Contribution to the Valence Band of Cubic Hg_{1-x}Fe_{x}S - Resonant Photoemission Study

100%
Kowalski B. J., Orłowski B. A., Szuszkiewicz W., Witkowska B., Johnson R. L.
Acta Physica Polonica A
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1995
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vol. 88
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issue 4
791-794
EN
Resonant photoemission spectra of cubic Ηg_{0.94}Fe_{0.06}S were measured for photon energies near to the energy of intra atomic Fe 3p^{6}3d^{6} → 3p^{5}3d^{7} transition. The difference between the spectra taken at resonance and an­tiresonance is presented as a measure of the energy distribution of Fe 3d derived states. The results obtained show that Fe 3d states contribute to the whole valence band with a distinct structure appearing at the band edge.
3
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Gd 4f and 5d Electrons in Sn_{0.96}Gd_{0.04}Te Valence Band

100%
Orłowski B. A., Kowalski B. J., Gołacki Z., Story T., Johnson R. L.
Acta Physica Polonica A
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1995
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vol. 88
|
issue 5
857-860
EN
The synchrotron radiation was applied to measure resonant photoemission spectra (Fano-type Gd 4d-4f resonance), constant initial states and constant final states to study the valence band electronic structure of Sn_{0.96}Gd_{0.04}Te crystal. The resonant energy was found equal to 150.3 eV. The electrons 4f were found to contribute to the valence band of the crystal with the maximum located at 9.5 eV below the valence band edge whereas 5d electrons contribute at the crystal valence band edge.
4
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Cd_{1-x}Fe_{x}Te Ternary Crystal Formation Studied by Resonant Photoemission

86%
Guziewicz E., Kowalski B. J., Gołacki Z., Orłowski B. A., Johnson R. L., Masek J.
Acta Physica Polonica A
|
1997
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vol. 92
|
issue 4
793-796
EN
A resonant photoemission was used to study the ternary crystal formation, when small amount of Fe atoms was deposited (in one monolayer range of thickness) on the clean CdTe(100) surface. The constant initial state spectra taken near the Fe 3p-3d transition after Fe deposition and then again after heating process show the existence of two Fano-like resonance. The differences of the energy distribution curves taken for both resonance and antiresonance, respectively, allow us to distinguish two kind of Fe 3d contributions to the valence band: one derived from the metallic Fe islands on the surface and the second - derived from the Fe atoms built into the Cd_{1-x}Fe_{x}Te crystal.
5
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Resonant Photoemission Study of Gd 4f States in IV-VI Crystals

86%
Kowalski B. J., Gołacki Z., Guziewicz E., Orłowski B. A., Ghijsen J., Johnson R. L.
Acta Physica Polonica A
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1997
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vol. 91
|
issue 4
819-823
EN
Resonant photoemission experiments were performed in order to reveal the contributions of half-filled Gd 4f^{7} shell to the electronic structures of Sn_{0.95}Gd_{0.05}Te and Pb_{0.95}Gd_{0.05}S crystals. The influences of the Gd 4f^{6} final-state multiplet splitting and f-ligand hybridization on the shapes of the spectra are discussed.
6
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Cr 3d Surface and Bulk States in Sn_{1-x}Cr_{x}Te/Cr Crystals

86%
Guziewicz E., Szamota-Sadowska K., Kowalski B. J., Grodzicka E., Story T., Orłowski B. A., Johnson R. L.
Acta Physica Polonica A
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1997
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vol. 91
|
issue 4
783-787
EN
We report a new approach to investigate metal-semiconductor interface formation. Photoemission spectroscopy was applied in order to investigate the clean surface of a Sn_{0.97}Cr_{0.03} Te crystal and to observe its changes under sequential deposition of small amounts of Cr atoms. In order to analyse the Cr 3d contribution to the valence band, the Fano-type resonance tuned to the Cr 3p-3d transition was used. The experiment was designed to follow the Sn_{0.97}Cr_{0.03} Te/Cr interface formation process. At the clean Sn_{0.97}Cr_{0.03}Te surface, the Cr 3d states contribution to the valence band was found to be positioned 0.8 eV below the Fermi level. After the Cr deposition processes the contribution shifted to a higher binding energy and another contribution 5.8 eV below the Fermi level was also observed.
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