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Thermal Desorption of Helium from Defected Silicon

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Turek M., Droździel A., Pyszniak K., Wójtowicz A., Mączka D., Yuschkevich Y., Vaganov Y., Żuk J.

Acta Physica Polonica A

2015

vol. 128

issue 5

849-852

The thermal desorption spectroscopy measurements of He implanted silicon samples are reported. The He implantation energy was 90 keV (at 45° tilt) while the fluence was 10¹⁶ cm¯². Additionally, the influence of Si pre-implantation (fluences in the range 10¹⁴-10¹⁶ cm¯², E=260 keV) was under investigation. The He releases from both interstitials/vacancies (β peak) and cavities (α peak or rather band consisting probably of at least two peaks) were observed. The α peak disappears for the pre-implantation fluences larger than 10¹⁵ cm¯², while β peak becomes broader and shifts toward higher temperatures. The thermal desorption spectra were collected using heating ramp rates in the range 0.3-0.7 K/s. Desorption activation energy of the β peak for different pre-implantation fluences was found using the Redhead analysis of the β peak shift. It varies from 0.97 eV for the sample that was not pre-implanted up to 1.3 eV for the sample pre-implanted with the fluence 10¹⁶ cm¯².

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1 Acta Physica Polonica A

1 2015

1 Droździel A.

1 Mączka D.

1 Pyszniak K.

1 Turek M.

1 Vaganov Y.

1 Wójtowicz A.

1 Yuschkevich Y.

1 Żuk J.

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Thermal Desorption of Helium from Defected Silicon