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1

Ion and Electron Beam Induced Luminescence οf Rare Earth Doped YAG Crystals

100%

Gawlik G., Sarnecki J., Jóźwik I., Jagielski J., Pawłowska M.

Acta Physica Polonica A

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2011

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vol. 120

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issue 1

181-183

EN

The aim of this work was the evaluation of ion-beam induced luminescence for the characterization of luminescent oxide materials containing rare earth elements. The yttrium aluminium garnet epilayers doped with Nd, Pr, Ho, and Tm atoms were used. The ion-beam induced luminescence spectra were excited using 100 keV H_2^{+} ion beam and were recorded in the wavelengths ranging from 300 nm up to 1000 nm. The separate parts of the surface of the same samples were used for ion-beam induced luminescence and cathodoluminescence experiments. Cathodoluminescence spectra have been recorded in the range from 370 nm up to 850 nm at 20 keV e-beam in scanning electron microscope equipped with a grating spectrometer coupled with a photomultiplier. The observed narrow ion-beam induced luminescence lines can be ascribed to the well known radiative transitions in the rare-earth ions in the YAG crystals. The cathodoluminescence spectra reveal essentially the same emission lines as ion-beam induced luminescence. The decrease of the ion-beam induced luminescence lines intensity has been observed under the increasing ion fluences. The ion-beam induced luminescence may be used for characterization of transparent luminescent materials as an alternative method for cathodoluminescence and can be especially useful for observation of ion-beam damage formation in crystals.

2

White Beam Synchrotron Topographic Characterisation of Silicon Wafers Directly Bonded by Oxide Layer

100%

Wierzchowski W., Wieteska K., Graeff W., Gawlik G., Pawłowska M.

Acta Physica Polonica A

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1999

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vol. 96

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issue 2

283-288

EN

Various types of layer structures obtained by direct bonding of oxidised silicon wafers were studied by means of different X-ray topographic methods using white synchrotron beam and the observation of selective etching pattern using scanning electron microscopy and optical microscopy with Nomarski contrast. In the present investigation the particularly important results were obtained with synchrotron section topography, which revealed different defects caused by bonding of thick wafers, in particular the dislocations and microcracks. The different situation was observed in the case of bonding with a very thin layer separated from a silicon substrate by high dose proton implantation. In this case a thin layer accommodated practically all induced strain and the bonded oxidised thick substrate remained defect-free in its inner volume.

3

X-Ray and Electron-Optical Characterization of ZnSe(Co) Crystal with Natural Face

86%

Auleytner J., Domagała J., Gołacki Z., Pawłowska M., Pełka J., Regiński K.

Acta Physica Polonica A

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1993

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vol. 83

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issue 6

759-768

EN

Using complementary X-ray and electron-optical methods, a ZnSe(Co) crystal with natural face was investigated. X-ray diffraction methods such as double-crystal X-ray reflection topography, double-crystal diffractometry for rocking curve measurements, precise lattice constant measurements by the Bond technique were used for crystal structure characterization and X-ray fluorescence method for studies of chemical composition along the crystal. The scanning electron microscopic image of the crystal surface and reflection diffraction of the high-energy electrons enriched the crystal structure characterization. It was shown that X-ray characterization and reflection high-energy electron diffraction can be regarded as very important complementary tools for non-destructive investigation of the ZnSe(Co) crystal surface layers.

4

Electron Microscopy and X-ray Diffraction Study of AlN Layers

86%

Kowalczyk A., Jagoda A., Mücklich A., Matz W., Pawłowska M., Ratajczak R., Turos A.

Acta Physica Polonica A

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2002

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vol. 102

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issue 2

221-225

EN

AlN nanocrystalline layers and superstructures are used in the modern optoelectronic technology as reflecting mirrors in semiconductor lasers. In the present work the properties of AlN films prepared by sputtering methods from an AlN target in reactive Ar + N plasma were investigated. The characterisation was performed with HRTEM, SEM, glancing angle XRD and RBS methods. The present measurements confirmed the polycrystalline structure of AlN layers and enabled the evaluation of their grain size. The roughness and thickness of the layers were additionally determined by ellipsometric and profilometric measurements.

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4 Acta Physica Polonica A

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1 Gołacki Z.

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1 Kowalczyk A.

1 Matz W.

1 Mücklich A.

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1 Regiński K.

1 Sarnecki J.

1 Turos A.

1 Wierzchowski W.

1 Wieteska K.

Ion and Electron Beam Induced Luminescence οf Rare Earth Doped YAG Crystals

White Beam Synchrotron Topographic Characterisation of Silicon Wafers Directly Bonded by Oxide Layer

X-Ray and Electron-Optical Characterization of ZnSe(Co) Crystal with Natural Face

Electron Microscopy and X-ray Diffraction Study of AlN Layers