Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 1

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Micro-Raman Investigation of Hydrogen Localized in Cone-Shaped Defects Formed on the Silicon Wafer Surface

100%
Frantskevich N., Fedotov A., Frantskevich A., Mazanik N.
Acta Physica Polonica A
|
2014
|
vol. 125
|
issue 6
1332-1334
EN
The goal of this work is the micro-Raman study of molecular hydrogen localized in cone-shaped defects, which are formed on the surface of previously helium implanted and annealed Czochralski Si wafers as a result of hydrogen plasma treatment. The line at ≈ 4158 cm^{-1} corresponding to molecular hydrogen is observed in the Raman spectra when the laser beam is focused both on cone-shaped defects or defect-free regions of the surface. The laser irradiation of cone-shaped defects during micro-Raman experiments leads to intensity increase of this line when the irradiation time is increasing, with subsequent appearance of lines at ≈ 3621 and ≈ 3698 cm^{-1} and simultaneous disappearance of 4158 cm^{-1} line. No such effect was observed when the laser beam was focused on defect-free regions. The experiments have shown that heat treatment of the samples studied causes the appearance in the Raman spectra of lines at ≈ 3468, ≈ 3621, and ≈ 3812 cm^{-1}, which can be associated with molecular hydrogen.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.