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Epitaxially Induced Defects in Sr- and O-doped La_{2}CuO_{4} Thin Films Grown by MBE: Implications for Transport Properties

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Locquet J., Williams E.

Acta Physica Polonica A

1997

vol. 92

issue 1

69-84

In this paper, the critical role played by various types of defects and strain relaxation mechanisms in high-T_{c} thin films is highlighted and illustrated with examples. The defects are essential for providing adequate diffusion channels for oxygen ingress during the cooling step in c-axis thin films. The operation of strain relaxation mechanisms necessitated by the lattice mismatch between film and substrate can impose a compressive or tensile biaxial pressure, which either increases or reduces the critical temperature.

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1 Acta Physica Polonica A

1 1997

1 Locquet J.

1 Williams E.

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Epitaxially Induced Defects in Sr- and O-doped La_{2}CuO_{4} Thin Films Grown by MBE: Implications for Transport Properties