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Structural and Electrical Properties of Low Concentration SnTe Layers and PbTe/SnTe Heterostructures Grown by MBE

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Sadowski J., Grodzicka E., Dynowska E., Adamczewska J., Domagała J., Przedpelski W.

Acta Physica Polonica A

1997

vol. 92

issue 5

967-970

We analyse properties of thin SnTe layers and PbTe/SnTe heterostructures grown by MBE on BaF_{2}(111) substrates. Reflection high energy electron diffraction patterns registered during MBE growth of the samples as well as post-growth X-ray diffraction measurements evidence a high structural perfection of 0.6 μm thick SnTe layers and (50 Å PbTe)/(50 Å SnTe) superlattices. The full width at half maximum values of (222) X-ray rocking curves measured for these thin SnTe layers crystallized in the optimal MBE growth conditions are about 300 arcsec; the carrier concentrations can be tuned from 5×10^{19} cm^{-3} to 10^{2 1} cm^{-3} depending on the MBE process parameters.

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1 Acta Physica Polonica A

1 1997

1 Adamczewska J.

1 Domagała J.

1 Dynowska E.

1 Grodzicka E.

1 Przedpelski W.

1 Sadowski J.

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Structural and Electrical Properties of Low Concentration SnTe Layers and PbTe/SnTe Heterostructures Grown by MBE