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XPS and Raman Characterizations of Zn_{1-x}Cd_{x}O Films Grown at the Different Growth Conditions

100%
Shtepliuk I., Khyzhun O., Lashkarev G., Khomyak V., Lazorenko V.
Acta Physica Polonica A
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2012
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vol. 122
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issue 6
1034-1038
EN
X-ray photoelectron spectroscopy was employed to characterize the surface chemistry and electronic properties of the Zn_{1-x}Cd_{x}O semiconductor systems obtained at the different growth conditions. The effect of the growth conditions on the core and valence band spectra as well as room-temperature photoluminescence of the Zn_{1-x}Cd_{x}O films was investigated and discussed. Behavior of the X-ray photoelectron spectroscopy peaks indicated an increase of the cadmium and a depletion of the oxygen concentrations upon changing the Ar/O_2 gas ratio and dc power.
2
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X-Ray Photoelectron Spectroscopy Study of Nitrogen and Aluminum-Nitrogen Doped ZnO Films

86%
Ievtushenko A., Khyzhun O., Shtepliuk I., Tkach V., Lazorenko V., Lashkarev G.
Acta Physica Polonica A
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2013
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vol. 124
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issue 5
858-861
EN
Undoped, nitrogen-doped and aluminum-nitrogen co-doped ZnO films were deposited on Si substrates by magnetron sputtering using layer-by-layer method of growth. X-ray photoelectron spectroscopy was employed to characterize electronic properties of undoped and nitrogen doped ZnO films. The effects of N and N-Al incorporation into the ZnO matrix on the X-ray photoelectron spectroscopy core-level and valence-band spectra of the films were studied and discussed.
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Enhancement of the Ultraviolet Luminescence Intensity from Cd-Doped ZnO Films Caused by Exciton Binding

73%
Shtepliuk I., Lashkarev G., Khyzhun O., Kowalski B., Reszka A., Khomyak V., Lazorenko V., Timofeeva I.
Acta Physica Polonica A
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2011
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vol. 120
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issue 5
914-917
EN
ZnO films doped with the cadmium (0.4-0.6%) were grown on crystalline sapphire c-Al_2O_3 substrates applying radiofrequency magnetron sputtering at the temperature of 400°C in Ar-O_2 atmosphere. The as-grown films were investigated in detail using X-ray diffraction, X-ray photoelectron spectroscopy, and cathodoluminescence spectra. The X-ray diffraction analysis revealed that the films possess a hexagonal wurtzite-type structure with the dominant crystallite orientation along the c axis. It was found that the small concentration of the cadmium significantly enhances the ultraviolet emission associated with excitonic transitions. We suggest that this enhancement effect mainly results from appearance of the cadmium isoelectronic traps, which may bind an exciton, thereby increasing the probability of radiation recombination. The effect of Cd isoelectronic impurity on structural and luminescent properties of ZnO films is discussed.
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