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Structural and Optoelectronic Properties of In-Zn-S sprayed Layers

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Lazzez S., Boubaker K., Ben Nasrallah T., Amlouk M., Belgacem S., Mnari M., Chtourou R.

Acta Physica Polonica A

2008

vol. 114

issue 4

869-880

In this work, In-Zn-S thin layers were prepared using the spray pyrolysis technique on glass substrates at 320°C. The molar ratio between zinc and indium x=[Zn^{2+}]/[In^{3+}] was varied in 0-0.4 domain whereas [S^{2-}]/[In^{3+}] one was taken constant equal to 2. The atomic composition was carried out with the atomic absorption. The structural study of all layers via X-ray diffraction and atomic force microscopy shows that the layer, obtained using x=0 is formed by binary material In_2S_3 with a principal orientation along (400). When the composition increases the same study depicts the presence of other materials such as ZnO, ZnS, and ZnIn_2S_4. On the contrary, for x=0.4, the film is mainly formed by the ternary compound ZnIn_2S_4 which crystallizes in cubic phase. Moreover, the optical analysis via the transmittance, reflectance as well as the photocurrent reveals that the band gap energy E_g increases slightly as a function of the x composition (E_g varies from 2.6 to 2.9 eV).

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1 Acta Physica Polonica A

1 2008

1 Amlouk M.

1 Belgacem S.

1 Ben Nasrallah T.

1 Boubaker K.

1 Chtourou R.

1 Lazzez S.

1 Mnari M.

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Structural and Optoelectronic Properties of In-Zn-S sprayed Layers