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Polarity Related Problems in Growth of GaN Homoepitaxial Layers

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Leszczyński M., Prystawko P., Śliwinski A., Suski T., Litwin-Staszewska E., Porowski S., Paszkiewicz R., Tłaczała M., Beaumont B., Gibart P., Barski A., Langer R., Knap W., Frayssinet E.

Acta Physica Polonica A

1998

vol. 94

issue 3

427-430

Homoepitaxial layers of GaN were grown by metalorganic chemical vapour deposition on single crystals obtained by high-pressure, high-temperature technology. For each metalorganic chemical vapour deposition run, four samples were placed, (00.1) and (00.1̲) faces of the Mg-doped insulating and undoped highly-conductive substrates. The layers were examined using X-ray diffraction, photoluminescence and far-infrared reflectivity. It was found that the (00.1̲) easier incorporates donors resulting in higher free-electron concentrations in the layers grown on these sides of the crystals, both, undoped and Mg-doped.

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1 Acta Physica Polonica A

1 1998

1 Barski A.

1 Beaumont B.

1 Frayssinet E.

1 Gibart P.

1 Knap W.

1 Langer R.

1 Leszczyński M.

1 Litwin-Staszewska E.

1 Paszkiewicz R.

1 Porowski S.

1 Prystawko P.

1 Suski T.

1 Tłaczała M.

1 Śliwinski A.

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Polarity Related Problems in Growth of GaN Homoepitaxial Layers