Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 1

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions

100%
Lewińska S., Gryglas-Borysiewicz M., Przybytek J., Baj M., Jouault B., Gennser U., Ouerghi A.
Acta Physica Polonica A
|
2011
|
vol. 119
|
issue 5
606-608
EN
Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon δ-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.