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EN
Strong perturbation in the 6¹Π state of the ³⁹K⁷Li molecule is analysed. The perturbing state is identified as 3³∆ on the basis of experimental observations aided by comparison with recent theoretical calculations. Possibilities of accessing triplet states of KLi via the 6¹Π∼ 3³∆ perturbation are discussed.
EN
A computer simulation of an experiment allowing for monitoring of vibrational motion of the wave packet in the Na_{2} molecule is presented. The experiment is based on pump and delayed probe excitation followed by observation of laser-induced fluorescence.
EN
Two previously unknown electronic states of K_2, both of ^1Π_u symmetry, have been observed by polarisation labelling spectroscopy technique in the energy region of 31500-33100 cm^{-1} above the bottom of the molecular ground state potential well. Major molecular constants have been determined for these states and the potential curves have been constructed using the Rydberg-Klein-Rees method. The correlation of the observed states with atomic limits is discussed.
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Laser Induced Fluorescence of Indium Vapour

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EN
Indium vapour was illuminated with laser light in the wavelength range 350-372 nm and at 410.3 nm. A few fluorescence bands of In_{2} as well as a strong background emission of indium-quartz compounds were observed. An evidence of energy transfer processes in indium vapour was found.
EN
The polarisation labelling spectroscopy method is applied to study the C^1Σ^+← X^1 Σ^+ band system of the KLi molecule. Rotationally resolved polarisation spectra are observed in the spectral range of 17150-20350 cm^{-1}. A set of Dunham coefficients describes the C^1Σ^+ state to 95% of its potential well depth, and the potential curve is constructed by the Rydberg-Klein-Rees procedure. The molecular parameters deduced from this work are compared with theoretical calculations.
EN
In situ high-temperature scanning tunnelling spectroscopy measure-ments recorded on the heavily reduced TiO_2(110) surface which contains Ti_2O_3 regions showed disappearance of the energy gap accompanied by substantial decrease in amplitude of the band edge states with increasing temperature. It indicates smooth insulator-metal transition caused by bands overlap in Ti_2O_3, which takes place at elevated temperatures. In situ high-temperature scanning tunnelling microscopy and spectroscopy were used to study the influence of temperature on the electronic properties of Ni_xMn_{3-x}O_{3-δ} (0.4< x<1) thin films deposited by rf magnetron sputtering at three different oxygen/argon (2.5%, 10%, 15%) containing ambient. The morphology and distribution of the local density of states of the observed films did not show any difference for the films deposited at different conditions. The distribution of the local density of states was temperature dependent. The changes in the shape of the local density of states observed at 473 K were reversible with temperature implying that no permanent change of the electronic structure occurred.
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