The paper presents the results of investigation of element composition of CuInSe₂ (CIS) compounds obtained by vertical Bridgman technique and on a glass substrate by the thermal deposition of Cu-In thin films with the subsequent annealing in selenium vapour. The depth profile distribution of elements in these samples using the Rutherford backscattering spectrometry/channeling technique in conjunction with the RUMP code simulation is also discussed.
PbSnS thin films were prepared by hot-wall vacuum evaporation. The Rutherford backscattering technique was employed for the investigation of Pb_{x}Sn_{1 - x}S thin films composition. With a help of atomic force microscopy the main stages in the development of the thin films were characterized. Contact angle measurements of water drop on Pb_{x}Sn_{1 - x}S thin films have been conducted on our original setup.
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