The parameters of radiation sensitivity of the oxygen-doped fluorite crystals were calculated in a one-dimensional model. The limit concentrations of the color centers as a function of the concentration of the oxygen impurity in the fluorite crystal were defined. Fluorite crystals with anti-Frenkel defects in the anion sublattice of the crystal have a specific property: the discolored after irradiation crystal being irradiated repeatedly with ionizing radiation retains the "memory" of the preceding irradiation. Using an ion chain model this paper studies under what conditions the "radiation memory" effect can arise in the MeF₂-O²¯ crystals as well as the extent of its contribution into the overall radiation sensitivity of the crystal.
The spectral and kinetic parameters of electron-pulse-initiated transient absorption of oxygen-doped CaF_{2} crystals were studied using pulsed spectrometry with a nanosecond time resolution. It is shown that the formation of a M_{A}^{+} color centers in CaF_{2}-0.01M%CaO crystals occurs by thermally activated diffusion of the vacancies. Activation energy of M_{A}^{+} color centers formation process of 0.4 eV is established.
Porous synthetic opal possessing a three-dimensional photonic band structure of semimetallic type was impregnated with polycrystalline CdS. The photonic stop band in (111) direction was examined by means of photoreflection technique. Under cw laser excitation of semiconductor inclusions the reflectance of the system changes indicating a modification of photonic band structure. A possible mechanism is discussed. Numerical simulations within the framework of quasicrystalline approximation are given.
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