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Light Emission Properties of GaN-Based Laser Diode Structures

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Godlewski M., Phillips M., Czernecki R., Targowski G., Perlin P., Leszczyński M., Figge S., Hommel D.
Acta Physica Polonica A
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2005
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vol. 108
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issue 4
675-680
EN
Cathodoluminescence is applied for evaluation of in-depth and in-plane variations of light emission from two types of GaN-based laser diode structures. We evaluate in-depth properties of the laser diode emission and demonstrate that potential fluctuations still affect emission of laser diodes for e-beam currents above thresholds for a stimulated emission.
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