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EN
The angular dependence of photoemission energy distributions were measured from single crystal, substitutional disordered alloys Ag_{x}Pd_{1-x} with x = 0.97 and x = 0.90. The random hybridization between the Ag 5sp band and the Pd 4d state is discussed in terms of complex energies.
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MBE Growth and Properties of GaMnAs(100) Films

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EN
We present here the results of measurements of structural and electronic properties of GaMnAs - a new diluted magnetic semiconductor system. This ternary III-V-Mn compound with the Mn content as high as 7% was obtained for the first time (by means of molecular beam epitaxial growth) by Ohno, Munekata et al. and the studies of its properties are not completed until now. We did the high resolution X-ray diffraction investigations and photoemission measurements of the samples with Mn content varied from about 0.1% up to 5%. The crystalline perfection of the ternary GaMnAs compound is very high - full width at half maximum of GaMnAs (400) Bragg reflections are of order of 50 arcseconds and the layers are fully strained to the GaAs(100) substrate. In photoemission experiments we traced the contribution of Mn 3d states to the band structure of GaMnAs ternary compound.
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