In this study, K_{β}/K_{α} X-ray intensity ratios of zinc in pure zinc, undoped ZnO thin film and boron and fluorine-doped ZnO thin films have been investigated. These samples have been excited by 59.5 keV γ-rays from a ^{241}Am annular radioactive source. K X-rays emitted by the samples have been counted using an Ultra-LEGe detector with a resolution of 150 eV at 5.9 keV. The K_{β}/K_{α} X-ray intensity ratios of the doped ZnO thin films have been compared with that of the undoped ZnO thin film. The deviations between the results can be explained by delocalization and/or charge transfer phenomena causing change in valence electronic configuration of zinc.
The zinc selenide and copper selenide thin films were deposited by chemical deposition technique on glass substrates. For both films, sodium selenosulphate was used as a selenide ion source in an alkaline solution. The X-ray diffraction patterns show that the ZnSe has a cubic structure and Cu_3Se_2 film has a tetragonal structure. The relative intensity K_ β / K_ α of zinc and copper selenide thin films has been measured by using a ^{241}Am radioisotope source (75 mCi). The obtained results were compared with the theoretical values.
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