Search results

Sort By:

Limit search:

Comparison of Ultrafast Photodetectors Based on N^+GaAs and LT GaAs

100%

Białous M., Mogilinski R., Wierzbicki M., Świtkowski K., Pura B.

Acta Physica Polonica A

2011

vol. 119

issue 3

382-386

We present investigation of a photodetector based on nitrogen-ion-implanted GaAs. Device photoresponse signal shows 1.15 ps FWHM (400 GHz, 3 dB bandwidth) with the voltage amplitude ≈ 1 mV, measured using a constructed electro-optic sampling setup with 80 fs width, 795 nm wavelength and laser pulses repetition rate of 80 MHz. Changes in the shape of electrical signal for different beam powers excitation and voltage biases have been demonstrated, compared with LT GaAs photodetector based on the same finger geometry. Using technique of X-ray diffraction and diffuse scattering analyses we have observed the decrease of lattice constant, radius of nanoclusters after implantation, respectively, and linear density dislocations increased over twice.

Refine search results

1 Acta Physica Polonica A

1 2011

1 Białous M.

1 Mogilinski R.

1 Pura B.

1 Wierzbicki M.

1 Świtkowski K.

Search results

Comparison of Ultrafast Photodetectors Based on N^+GaAs and LT GaAs