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Hot-Electron Transport Noise and Power Dissipation in GaN Channels at High Density of Electrons

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Matulionis A., Liberis J., Matulionienė I., Ramonas M.
Acta Physica Polonica A
|
2008
|
vol. 113
|
issue 3
967-970
EN
The experimental results on transport, noise, and dissipation of electric power for voltage-biased Si-doped GaN channels are compared with those of Monte Carlo simulation. The measured dissipated power shows a stronger hot-phonon effect than the simulated one. On the other hand, the experimental results on the electron drift velocity at high electric fields show a weaker hot-phonon effect as compared with the simulated one. The misfit can be reduced if a conversion of the friction-active nonequilibrium longitudinal optical phonons into the friction-passive longitudinal optical phonons is considered.
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