Metal-oxide thin films have recently become good candidates for the hole transport layer material, for solving the stability problem in organic photovoltaic devices. Metal oxide semiconductors (MoO_{x}, WO₃, V₂O₅) are very promising because of their suitable optoelectronic properties, ambient stability, high work function, and solution processability. Intrinsic n-type behavior of molybdenum oxide (MoO_{x}) is found to enhance p-type doping effect on single-walled carbon nanotubes. In this study, the effect of using MoO_{x} doped single-walled carbon nanotube films as hole transport layer in organic solar cells was investigated. Thin films and organic solar cells were characterized using scanning electron microscopy, atomic force microscopy, UV-NIR absorption spectroscopy and device current-voltage measurements.
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