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Characterization of Defect Centres in Semiconductors by Advanced ENDOR Techniques

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Gregorkiewicz T., Altink H., Ammerlaan C.
Acta Physica Polonica A
|
1991
|
vol. 80
|
issue 2
161-170
EN
The advanced magnetic resonance techniques and their application to the studies of defects in semiconductors will be reviewed. Transient and stationary ENDOR, optically detected ENDOR and double ENDOR variations will be briefly discussed while special attention will be given to the Field-Stepped-ENDOR technique. The successful application of the advanced ENDOR techniques for the structure determination of complex defects will be illustrated by the examples concerning the boron-vacancy complex and thermal donors in silicon and the gallium vacancy in gallium phosphide.
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