Experimental and computation results based on chemical composition assessment of metal-organic chemical vapour deposition grown undoped GaN/Al_xGa_{1-x}N multiquantum well structures in the low composition limit of x = 0.07 and wide wells demonstrate composition fluctuations in the barrier layers which lead to large-scale nonuniformities and inequivalence of the different wells. As a consequence the experimental photoluminescence spectra at low temperature show a double peak structure indicative of well-width fluctuations by one lattice parameter (2 monolayers).
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